Carbon nanotube thin film transistors based on aerosol methods

Nanotechnology

Volumn 20, Issue 8, 2009, Pages

  Zavodchikova, Marina Y ^a   Kulmala, Tero ^a   Nasibulin, Albert G ^a   Ermolov, Vladimir ^b   Franssila, Sami ^a   Grigoras, Kestutis ^a   Kauppinen, Esko I ^a,c  

^a AALTO UNIVERSITY   (Finland)

^b NOKIA RESEARCH CENTER   (United States)

^c VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; FABRICATION METHODS; FIELD-EFFECT MOBILITIES; FLOATING CATALYSTS; GATE DEVICES; GATE TRANSISTORS; IN VACUUMS; ON/OFF RATIOS; PLASTIC SUBSTRATES; POLYMER SUBSTRATES; ROOM TEMPERATURES; SINGLE-WALLED; SINGLE-WALLED CARBON NANOTUBE NETWORKS; SOLUTION-PROCESSED; SYNTHESIS REACTORS; THERMAL TREATMENTS; TOP GATES; VARIOUS SUBSTRATES;

ALUMINUM; ATMOSPHERIC AEROSOLS; CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; ELECTRODEPOSITION; FIELD EFFECT TRANSISTORS; HEAT TREATMENT; HYSTERESIS; MESFET DEVICES; PASSIVATION; SINGLE-WALLED CARBON NANOTUBES (SWCN); THERMAL EFFECTS; THIN FILM TRANSISTORS; THIN FILMS;

SUBSTRATES;

ALUMINUM OXIDE; CARBON NANOTUBE; PLASTIC; POLYMER; SILICON DIOXIDE;

AEROSOL; ARTICLE; CATALYST; DENSITY; DEVICE; FIELD EFFECT TRANSISTOR; FILM; HEAT; HEAT TOLERANCE; HYSTERESIS; PERFORMANCE; PRIORITY JOURNAL; REACTOR; ROOM TEMPERATURE; SEMICONDUCTOR; STRUCTURE ANALYSIS; VACUUM; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; NANOTECHNOLOGY; ULTRASTRUCTURE;

AEROSOLS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; NANOTECHNOLOGY; NANOTUBES, CARBON; TRANSISTORS;

EID: 65249106031     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/8/085201     Document Type: Article

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