Ultrahigh electron mobility in suspended graphene

Solid State Communications

Volumn 146, Issue 9-10, 2008, Pages 351-355

  Bolotin, K I ^a   Sikes, K J ^a   Jiang, Z ^a,b   Klima, M ^a   Fudenberg, G ^a   Hone, J ^a   Kim, P ^a   Stormer, H L ^a,c  

^a Columbia University ^*  (United States)

^b FLORIDA STATE UNIVERSITY   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

A. Graphene; B. Nanofabrication; D. Electronic transport

Indexed keywords

CARRIER CONCENTRATION; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; ETCHING; NANOTECHNOLOGY;

ELECTRONIC TRANSPORT; GATE ELECTRODES;

GRAPHITE;

EID: 43049170468     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.02.024     Document Type: Article

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