Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor

Science

Volumn 300, Issue 5623, 2003, Pages 1269-1272

  Nomura, Kenji ^a,b   Ohta, Hiromichi ^a   Ueda, Kazushige ^b   Kamiya, Toshio ^a,b   Hirano, Masahiro ^a   Hosono, Hideo ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; IRRADIATION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS;

GATE INSULATORS;

THIN FILM TRANSISTORS;

HAFNIUM; HAFNIUM OXIDE; UNCLASSIFIED DRUG;

SEMICONDUCTOR INDUSTRY;

ARTICLE; CRYSTALLIZATION; DEVICE; ELECTRONICS; FILM; LIGHT IRRADIANCE; PRIORITY JOURNAL; SEMICONDUCTOR; THICKNESS;

EID: 0038362743     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1083212     Document Type: Article

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