Low temperature poly-si thin-film transistor fabrication by metal-induced lateral crystallization

IEEE Electron Device Letters

Volumn 17, Issue 4, 1996, Pages 160-162

  Lee, Seok Woon ^a,b,c   Joo, Seung Ki ^a,b  

^a IEEE

^b Seoul National University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; FILM PREPARATION; NICKEL; OXIDATION; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; ULTRATHIN FILMS;

METAL INDUCED LATERAL CRYSTALLIZATION; PLASMA OXIDATION; THIN FILM TRANSISTOR MANUFACTURE; THRESHOLD VOLTAGE; ULTRATHIN NICKEL LAYER;

THIN FILM TRANSISTORS;

EID: 0030128485     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485160     Document Type: Article

References (10)

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