Mobility engineering and a metal-insulator transition in monolayer MoS 2

Nature Materials

Volumn 12, Issue 9, 2013, Pages 815-820

  Radisavljevic, Branimir ^a   Kis, Andras ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON-ELECTRON INTERACTIONS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; IMPURITIES; MONOLAYERS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES;

CHANNEL MATERIALS; CORRELATION EFFECT; ELECTRICAL TRANSPORT MEASUREMENTS; FIELD EFFECT TRANSISTOR (FETS); LAYERED MATERIAL; MESOSCOPIC SYSTEMS; QUANTUM MECHANICAL CONFINEMENT; TEMPERATURE DEPENDENCE;

MOLYBDENUM COMPOUNDS;

DISULFIDE; MOLYBDENUM; MOLYBDENUM DISULFIDE;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; SEMICONDUCTOR; TEMPERATURE;

DISULFIDES; ELECTRON TRANSPORT; MOLYBDENUM; SEMICONDUCTORS; TEMPERATURE;

EID: 84883179670     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat3687     Document Type: Article

References (47)

1. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotech. 7, 699-712 (2012).
2. Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451-10453 (2005).
3. Coleman, J. N. et al. Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science 331, 568-571 (2011).
4. Smith, R. J. et al. Large-scale exfoliation of inorganic layered compounds in aqueous surfactant solutions. Adv. Mater. 23, 3944-3948 (2011).
5. Liu, K-K. et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett. 12, 1538-1544 (2012).
6. Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M. & Lou, J. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 8, 966-971 (2012).
7. Bertolazzi, S., Brivio, J. & Kis, A. Stretching and breaking of ultrathin MoS2. ACS Nano. 5, 9703-9709 (2011).
8. Brivio, J., Alexander, D. T. L. & Kis, A. Ripples and layers in ultrathin MoS2 membranes. Nano Lett. 11, 5148-5153 (2011).
9. Lembke, D. & Kis, A. Breakdown of high-performance monolayer MoS2 transistors. ACS Nano. 6, 10070-10075 (2012).
10. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotech. 6, 147-150 (2011).
11. Radisavljevic, B., Whitwick, M. B. & Kis, A. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano. 5, 9934-9938 (2011).
12. Radisavljevic, B., Whitwick, M. B. & Kis, A. Small-signal amplifier based on single-layer MoS2. Appl. Phys. Lett. 101, 043103 (2012).
13. Ye, J. T. et al. Superconducting dome in a gate-tuned band insulator. Science 338, 1193-1196 (2012).
14. Lebegue, S. & Eriksson, O. Electronic structure of two-dimensional crystals from ab initio theory. Phys. Rev. B 79, 115409 (2009).
15. Kuc, A., Zibouche, N. & Heine, T. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2. Phys. Rev. B 83, 245213 (2011).
16. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
17. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
18. Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nature Nanotech. 7, 494-498 (2012).
19. Zeng, H., Dai, J., Yao, W., Xiao, D. & Cui, X. Valley polarization in MoS2 monolayers by optical pumping. Nature Nanotech. 7, 490-493 (2012).
20. Cao, T. et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nature Commun. 3, 887 (2012).
21. Feng, W. et al. Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study. Phys. Rev. B 86, 165108 (2012).
22. Yoon, Y., Ganapathi, K. & Salahuddin, S. How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768-3773 (2011).
23. Alam, K. & Lake, R. K. Monolayer MoS2 transistors beyond the technology road map. Elect. Dev. IEEE Trans. 59, 3250-3254 (2012).
24. Fivaz, R. & Mooser, E. Mobility of charge carriers in semiconducting layer structures. Phys. Rev. 163, 743-755 (1967).
25. Ghatak, S., Pal, A. N. & Ghosh, A. Nature of electronic states in atomically thin MoS2 field-effect transistors. ACS Nano. 5, 7707-7712 (2011).
26. Jena, D. & Konar, A. Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering. Phys. Rev. Lett. 98, 136805 (2007).
27. Han, L. & Ye, P. D. MoS2 dual-gate MOSFET with atomic-layer-deposited Al2O3 as top-gate dielectric. Elect. Dev. Lett. IEEE 33, 546-548 (2012).
28. Kim, S. et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nature Commun. 3, 1011 (2012).
29. Ming-Wei, L. et al. Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte. J. Phys. D 45, 345102 (2012).
30. Kaasbjerg, K., Thygesen, K. S. & Jacobsen, K. W. Phonon-limited mobility in n-type single-layer MoS2 from first principles. Phys. Rev. B 85, 115317 (2012).
31. Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices (Wiley, 2007).
32. Mott, N. F. Metal-Insulator Transitions (Barnes Noble Books, Taylor Francis, 1974).
33. Abrahams, E., Anderson, P. W., Licciardello, D. C. & Ramakrishnan, T. V. Scaling theory of localization: Absence of quantum diffusion in two dimensions. Phys. Rev. Lett. 42, 673-676 (1979).
34. Evers, F. & Mirlin, A. D. Anderson transitions. Rev. Mod. Phys. 80, 1355-1417 (2008).
35. Punnoose, A. & Finkel'stein, A. M. Metal-insulator transition in disordered two-dimensional electron systems. Science 310, 289-291 (2005).
36. Ho, L. H., Micolich, A. P., Hamilton, A. R. & Sushkov, O. P. Ground-plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another. Phys. Rev. B 80, 155412 (2009).
37. Salmani-Jelodar, M., Yaohua, T. & Klimeck, G. Single layer MoS2 band structure and transport. Proc. Int. Semiconductor Device Research Symp. (ISDRS) 1-2 (2011).
38. Ghosh, A. et al. Electron assisted variable range hopping in strongly correlated 2D electron systems. Phys. Status Solidi B 230, 211-216 (2002).
39. Okamoto, T., Hosoya, K., Kawaji, S. & Yagi, A. Spin degree of freedom in a two-dimensional electron liquid. Phys. Rev. Lett. 82, 3875-3878 (1999).
40. Dobrosavljevic, V., Trivedi, N. & Valles, J. M. Conductor-Insulator Quantum Phase Transitions (Oxford Univ. Press, 2012).
41. Gurvitch, M. Ioffe-Regel criterion and resistivity of metals. Phys. Rev. B 24, 7404-7407 (1981).
42. Mark, R. G., Adkins, C. J., Haim, B. & Ralph, R. Experimental study of the Ioffe-Regel criterion for amorphous indium oxide films. J. Phys. Condens. Matter 10, 809-819 (1998).
43. Lee, P. A. & Ramakrishnan, T. V. Disordered electronic systems. Rev. Mod. Phys. 57, 287-337 (1985).
44. Das, S., Chen, H-Y., Penumatcha, A. V. & Appenzeller, J. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. (2012).
45. Xia, J. L., Chen, F., Wiktor, P., Ferry, D. K. & Tao, N. J. Effect of top dielectric medium on gate capacitance of graphene field effect transistors: Implications in mobility measurements and sensor applications. Nano Lett. 10, 5060-5064 (2010).
46. Bao, W., Cai, X., Kim, D., Sridhara, K. & Fuhrer, M. S. High mobility ambipolar MoS2 field-effect transistors: substrate and dielectric effects. Appl. Phys. Lett. 102, 042104 (2013).
47. Chudnovskiy, F., Luryi, S. & Spivak, B. in Future Trends in Microelectronics: The Nano Millennium (eds Luriy, S., Xu, J.M. & Zaslavsky, A.) Part II, 148-155 (Wiley, 2002).