메뉴 건너뛰기




Volumn 1, Issue 10, 2013, Pages 175-180

Monolayer transition metal dichalcogenide channel-based tunnel transistor

Author keywords

2 D crystal; Atomistic simulation; Band to band tunneling; Complex band structure; Tunnel field effect transistor

Indexed keywords

BAND STRUCTURE; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL THEORY; MONOLAYERS; TENSILE STRAIN; TRANSITION METALS;

EID: 84900844152     PISSN: None     EISSN: 21686734     Source Type: Journal    
DOI: 10.1109/JEDS.2013.2292799     Document Type: Article
Times cited : (87)

References (39)
  • 1
    • 19744366972 scopus 로고    scopus 로고
    • Band-to-band tunneling in carbon nanotube field-effect transistors
    • Nov.
    • J. Appenzeller, Y. M. Lin, J. Knoch, and P. Avouris, "Band-to-band tunneling in carbon nanotube field-effect transistors," Phys. Rev. Lett., vol. 93, no. 19, pp. 196805(1)-196805(4), Nov. 2004.
    • (2004) Phys. Rev. Lett. , vol.93 , Issue.19 , pp. 1968051-1968054
    • Appenzeller, J.1    Lin, Y.M.2    Knoch, J.3    Avouris, P.4
  • 2
    • 81555207228 scopus 로고    scopus 로고
    • Tunnel field-effect transistors as energyefficient electronic switches
    • Nov.
    • A. M. Ionescu and H. Riel, "Tunnel field-effect transistors as energyefficient electronic switches," Nature, vol. 479, no. 7373, pp. 329-37, Nov. 2011.
    • (2011) Nature , vol.479 , Issue.7373 , pp. 329-337
    • Ionescu, A.M.1    Riel, H.2
  • 3
    • 77953026580 scopus 로고    scopus 로고
    • Experimental demonstration of 100 nm channel length In0.53Ga0.47Asbased vertical inter-band tunnel field effect transistors (TFET) for ultra low-power logic and SRAM applications
    • Dec.
    • S. Mookerjea, D. Mohata, R. Krishnan, J. Singh, A. Vallett, A. Ali, et al., "Experimental demonstration of 100 nm channel length In0.53Ga0.47Asbased vertical inter-band tunnel field effect transistors (TFET) for ultra low-power logic and SRAM applications," in Proc. IEEE IEDM, Dec. 2009, pp. 137.1-137.4.
    • (2009) Proc. IEEE IEDM , pp. 1371-1374
    • Mookerjea, S.1    Mohata, D.2    Krishnan, R.3    Singh, J.4    Vallett, A.5    Ali, A.6
  • 5
    • 84555223620 scopus 로고    scopus 로고
    • Integrated circuits and logic operations based on single-layer MoS2
    • Dec.
    • B. Radisavljevic, M. B. Whitwick, and A. Kis, "Integrated circuits and logic operations based on single-layer MoS2," ACS Nanotechnol., vol. 5, no. 12, pp. 9934-9938, Dec. 2011.
    • (2011) ACS Nanotechnol. , vol.5 , Issue.12 , pp. 9934-9938
    • Radisavljevic, B.1    Whitwick, M.B.2    Kis, A.3
  • 6
    • 80052790285 scopus 로고    scopus 로고
    • How good can monolayer MoS2 transistors be?
    • Sep.
    • Y. Yoon, K. Ganapathi, and S. Salahuddin, "How good can monolayer MoS2 transistors be?" Nano lett., vol. 11, no. 9, pp. 3768-3773, Sep. 2011.
    • (2011) Nano Lett. , vol.11 , Issue.9 , pp. 3768-3773
    • Yoon, Y.1    Ganapathi, K.2    Salahuddin, S.3
  • 7
    • 84859085243 scopus 로고    scopus 로고
    • Phonon-limited mobility in n-type single-layer MoS2 from first principles
    • Mar.
    • K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, "Phonon-limited mobility in n-type single-layer MoS2 from first principles," Phys. Rev. B, vol. 85, no. 11, pp. 115317(1)-115317(16), Mar. 2012.
    • (2012) Phys. Rev. B , vol.85 , Issue.11 , pp. 1153171-11531716
    • Kaasbjerg, K.1    Thygesen, K.S.2    Jacobsen, K.W.3
  • 8
    • 79961237848 scopus 로고    scopus 로고
    • Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2
    • Jun.
    • A. Kuc, N. Zibouche, and T. Heine, "Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2," Phys. Rev. B, vol. 83, no. 24, pp. 245213(1)-245213(4), Jun. 2011.
    • (2011) Phys. Rev. B , vol.83 , Issue.24 , pp. 2452131-2452134
    • Kuc, A.1    Zibouche, N.2    Heine, T.3
  • 9
    • 84864536898 scopus 로고    scopus 로고
    • Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: New direct band gap semiconductors
    • Jun.
    • A. Kumar and P. K. Ahluwalia, "Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: New direct band gap semiconductors," Eur. Phys. J. B, vol. 85, no. 6, pp. 186(1)-186(9), Jun. 2012.
    • (2012) Eur. Phys. J. B , vol.85 , Issue.6 , pp. 1861-1869
    • Kumar, A.1    Ahluwalia, P.K.2
  • 10
    • 77957204738 scopus 로고    scopus 로고
    • Atomically thin MoS2: A new direct-gap semiconductor
    • Sep.
    • K. Mak, C. Lee, J. Hone, J. Shan, and T. Heinz,"Atomically thin MoS2: A new direct-gap semiconductor," Phys. Rev. Lett., vol. 105, pp. 136805(1)-136805(4), Sep. 2010.
    • (2010) Phys. Rev. Lett. , vol.105 , pp. 1368051-1368054
    • Mak, K.1    Lee, C.2    Hone, J.3    Shan, J.4    Heinz, T.5
  • 11
    • 84869192373 scopus 로고    scopus 로고
    • Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2
    • Oct.
    • S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, et al., "Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2," Nano Lett., vol. 12, pp. 5576-5580 Oct. 2012.
    • (2012) Nano Lett. , vol.12 , pp. 5576-5580
    • Tongay, S.1    Zhou, J.2    Ataca, C.3    Lo, K.4    Matthews, T.S.5    Li, J.6
  • 12
    • 0017459606 scopus 로고
    • Temperature dependence of the electrical conductivity and hall coefficient in 2H-MoS2, MoSe2, WSe2, and MoTe2
    • Feb.
    • S. H. El-Mahalawy and B. L. Evans, "Temperature dependence of the electrical conductivity and hall coefficient in 2H-MoS2, MoSe2, WSe2, and MoTe2," Phys. Status Solid. B, vol. 79, no. 2, pp. 713-722, Feb. 1977.
    • (1977) Phys. Status Solid. B , vol.79 , Issue.2 , pp. 713-722
    • El-Mahalawy, S.H.1    Evans, B.L.2
  • 13
    • 84881566687 scopus 로고    scopus 로고
    • Extraordinary room-temperature photoluminescence in triangular WS2 monolayers
    • Nov.
    • H. R. Gutierrez, N. P. Lopez, A. L. Elias, A. Berkdemir, B. Wang, R. Lv, et al., "Extraordinary room-temperature photoluminescence in triangular WS2 monolayers," Nano Lett., vol. 13, no. 8, pp. 3447-3454, Nov. 2012.
    • (2012) Nano Lett. , vol.13 , Issue.8 , pp. 3447-3454
    • Gutierrez, H.R.1    Lopez, N.P.2    Elias, A.L.3    Berkdemir, A.4    Wang, B.5    Lv, R.6
  • 14
    • 0024910138 scopus 로고
    • Optical properties of mixed transition metal dichalcogenide crystals
    • Dec.
    • G. H. Yousefi, "Optical properties of mixed transition metal dichalcogenide crystals," Mater. Lett., vol. 9, no. 1, pp. 38-40, Dec. 1989.
    • (1989) Mater. Lett. , vol.9 , Issue.1 , pp. 38-40
    • Yousefi, G.H.1
  • 15
    • 77951069162 scopus 로고    scopus 로고
    • Emerging photoluminescence in monolayer MoS2
    • Mar.
    • A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, et al., "Emerging photoluminescence in monolayer MoS2," Nano Lett., vol. 10, pp. 1271-1275, Mar. 2010.
    • (2010) Nano Lett. , vol.10 , pp. 1271-1275
    • Splendiani, A.1    Sun, L.2    Zhang, Y.3    Li, T.4    Kim, J.5    Chim, C.-Y.6
  • 16
    • 77956233994 scopus 로고    scopus 로고
    • Optical identification of atomically thin dichalcogenide crystals
    • A. C.-Gomez, N. Agraít, and G. R.-Bollinger, "Optical identification of atomically thin dichalcogenide crystals," Appl. Phys. Lett., vol. 96, no. 21, pp. 213116(1)-213116(2), 2010.
    • (2010) Appl. Phys. Lett. , vol.96 , Issue.21 , pp. 2131161-2131162
    • Gomez, A.C.1    Agraít, N.2    Bollinger, G.R.3
  • 17
    • 84861345089 scopus 로고    scopus 로고
    • Atomistix ToolKit (ATK) [Online]. Available
    • QuantumWise Simulator, Atomistix ToolKit (ATK) [Online]. Available: http://www.quantumwise.com/
    • QuantumWise Simulator
  • 18
    • 84986524957 scopus 로고
    • Convergence acceleration of iterative sequences the case of scf iteration
    • Jul.
    • P. Pulay, "Convergence acceleration of iterative sequences the case of scf iteration," Chem. Phys. Lett., vol. 73, no. 2, pp. 393-398, Jul. 1980.
    • (1980) Chem. Phys. Lett. , vol.73 , Issue.2 , pp. 393-398
    • Pulay, P.1
  • 20
    • 21244471846 scopus 로고    scopus 로고
    • Cambridge, U.K.: Cambridge Univ. Press
    • R. M. Martin, Electronic Structure. Cambridge, U.K.: Cambridge Univ. Press, 2004.
    • (2004) Electronic Structure
    • Martin, R.M.1
  • 21
    • 84871763071 scopus 로고    scopus 로고
    • Direct band-to-band tunneling in reverse biased MoS2 nanoribbon p-n junctions
    • Jan.
    • R. K. Ghosh and S. Mahapatra, "Direct band-to-band tunneling in reverse biased MoS2 nanoribbon p-n junctions," IEEE Trans. Electron Devices, vol. 60, no. 1, pp. 274-279, Jan. 2013.
    • (2013) IEEE Trans. Electron Devices , vol.60 , Issue.1 , pp. 274-279
    • Ghosh, R.K.1    Mahapatra, S.2
  • 22
    • 84883801784 scopus 로고    scopus 로고
    • Proposal for graphene-boron nitride heterobilayer based tunnel FET
    • Sep.
    • R. K. Ghosh and S. Mahapatra, "Proposal for graphene-boron nitride heterobilayer based tunnel FET," IEEE Trans. Nanotechnol., vol. 12, no. 5, pp. 665-667, Sep. 2013.
    • (2013) IEEE Trans. Nanotechnol. , vol.12 , Issue.5 , pp. 665-667
    • Ghosh, R.K.1    Mahapatra, S.2
  • 23
    • 77952416438 scopus 로고    scopus 로고
    • Simulation of nanowire tunneling transistors: From the Wentzel-Kramers-Brillouin approximation to full-band phonon-assisted tunneling
    • Apr.
    • M. Luisier and G. Klimeck, "Simulation of nanowire tunneling transistors: From the Wentzel-Kramers-Brillouin approximation to full-band phonon-assisted tunneling," J. Appl. Phys., vol. 107, pp. 084507, Apr. 2010.
    • (2010) J. Appl. Phys. , vol.107 , pp. 084507
    • Luisier, M.1    Klimeck, G.2
  • 24
    • 77956058450 scopus 로고    scopus 로고
    • Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs
    • Sep.
    • R. K. Pandey, K. V. R. M. Murali, S. S. Furkay, P. J. Oldiges, and E. J. Nowak, "Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs," IEEE Trans. Electron Devices, vol. 57, no. 9, pp. 2098-2105, Sep. 2010.
    • (2010) IEEE Trans. Electron Devices , vol.57 , Issue.9 , pp. 2098-2105
    • Pandey, R.K.1    Murali, K.V.R.M.2    Furkay, S.S.3    Oldiges, P.J.4    Nowak, E.J.5
  • 26
    • 80052022710 scopus 로고    scopus 로고
    • Complex band structures: From parabolic to elliptic approximation
    • Sep.
    • X. Guan, D. Kim, K. C. Saraswat, and H.-S. P. Wong, "Complex band structures: From parabolic to elliptic approximation," IEEE Electron Device Lett., vol. 32, no. 9, pp. 1296-1298, Sep. 2011.
    • (2011) IEEE Electron Device Lett. , vol.32 , Issue.9 , pp. 1296-1298
    • Guan, X.1    Kim, D.2    Saraswat, K.C.3    Wong, H.-S.P.4
  • 27
    • 69249192691 scopus 로고    scopus 로고
    • Performance analysis of InP nanowire band-to-band tunneling field-effect transistors
    • M. A. Khayer and R. K. Lake, "Performance analysis of InP nanowire band-to-band tunneling field-effect transistors," Appl. Phys. Lett., vol. 95, no. 7, pp. 073504(1)-073504(3), 2009.
    • (2009) Appl. Phys. Lett. , vol.95 , Issue.7 , pp. 0735041-0735043
    • Khayer, M.A.1    Lake, R.K.2
  • 28
    • 80455150073 scopus 로고    scopus 로고
    • Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
    • Oct.
    • Z. Y. Zhu, Y. C. Cheng, and U. Schwingenschlogl, "Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors," Phys. Rev. B, vol. 84, no. 15, pp. 153402(1)-153402(5), Oct. 2011.
    • (2011) Phys. Rev. B , vol.84 , Issue.15 , pp. 1534021-1534025
    • Zhu, Z.Y.1    Cheng, Y.C.2    Schwingenschlogl, U.3
  • 30
    • 56049114725 scopus 로고    scopus 로고
    • Drive current boosting of n-type tunnel FET with strained SiGe layer at source
    • Dec.
    • N. Patel, A. Ramesha, and S. Mahapatra, "Drive current boosting of n-type tunnel FET with strained SiGe layer at source," Microelectron. J., vol. 39, no. 12, pp. 1671-1677, Dec. 2008.
    • (2008) Microelectron. J. , vol.39 , Issue.12 , pp. 1671-1677
    • Patel, N.1    Ramesha, A.2    Mahapatra, S.3
  • 32
    • 84879986171 scopus 로고    scopus 로고
    • Tunneling transistors based on graphene and 2-D crystals
    • Jul.
    • D. Jena, "Tunneling transistors based on graphene and 2-D crystals," Proc. IEEE, vol. 101, no. 7, pp. 1585-1602, Jul. 2013.
    • (2013) Proc. IEEE , vol.101 , Issue.7 , pp. 1585-1602
    • Jena, D.1
  • 33
    • 34547850370 scopus 로고    scopus 로고
    • Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec
    • Aug.
    • W. Y. Choi, B.-G Park, J. D. Lee, and T.-J. K. Liu, "Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec," IEEE Electron Device Lett., vol. 28, no. 8, pp. 743-745, Aug. 2007.
    • (2007) IEEE Electron Device Lett. , vol.28 , Issue.8 , pp. 743-745
    • Choi, W.Y.1    Park, B.-G.2    Lee, J.D.3    Liu, T.-J.K.4
  • 37
    • 84862234293 scopus 로고    scopus 로고
    • Ideal strength and phonon instability in single-layer MoS2
    • Jun.
    • T. Li, "Ideal strength and phonon instability in single-layer MoS2," Phys. Rev. B, vol. 85, no. 85, pp. 235407(1)-235407(5), Jun. 2012.
    • (2012) Phys. Rev. B , vol.85 , Issue.85 , pp. 2354071-2354075
    • Li, T.1
  • 38
    • 84863011344 scopus 로고    scopus 로고
    • Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)
    • Jan.
    • W. S. Yun, S. W. Han, S. C. Hong, I. G. Kim, and J. D. Lee, "Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)," Phys. Rev. B, vol. 85, no. 3, pp. 033305(1)-033305(5), Jan. 2012.
    • (2012) Phys. Rev. B , vol.85 , Issue.3 , pp. 0333051-0333055
    • Yun, W.S.1    Han, S.W.2    Hong, S.C.3    Kim, I.G.4    Lee, J.D.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.