Current saturation and voltage gain in bilayer graphene field effect transistors

Nano Letters

Volumn 12, Issue 3, 2012, Pages 1324-1328

  Szafranek, B N ^a   Fiori, G ^b   Schall, D ^a   Neumaier, D ^a,c   Kurz, H ^a,c  

^a AMO GMBH   (Germany)

^b UNIVERSITY OF PISA   (Italy)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Bilayer grapheme; current saturation; field effect transistor; graphene devices; voltage gain

Indexed keywords

100 GHZ; BI-LAYER; CHANNEL MATERIALS; CURRENT SATURATION; DISPLACEMENT FIELD; ELECTRIC DISPLACEMENT FIELDS; ELECTRONIC DEVICE; FIGURE OF MERITS; GATE LENGTH; GRAPHENE DEVICES; HIGH-FREQUENCY APPLICATIONS; IN-FIELD; SUB-100 NM; TIGHT-BINDING HAMILTONIANS; VOLTAGE GAIN;

CUTOFF FREQUENCY; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GAIN MEASUREMENT; GRAPHENE; MONOLAYERS;

ELECTRIC FIELD EFFECTS;

GRAPHITE; NANOMATERIAL;

AMPLIFIER; ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CONFORMATION; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; MACROMOLECULE; MATERIALS TESTING; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

AMPLIFIERS, ELECTRONIC; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC;

EID: 84858233159     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2038634     Document Type: Article

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