Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

Nature Materials

Volumn 8, Issue 3, 2009, Pages 203-207

  Emtsev, Konstantin V ^a   Bostwick, Aaron ^b   Horn, Karsten ^c   Jobst, Johannes ^a   Kellogg, Gary L ^d   Ley, Lothar ^a   McChesney, Jessica L ^b   Ohta, Taisuke ^d   Reshanov, Sergey A ^a   Röhrl, Jonas ^a   Rotenberg, Eli ^b   Schmid, Andreas K ^b   Waldmann, Daniel ^a   Weber, Heiko B ^a   Seyller, Thomas ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; BALLISTICS; GRAPHITE; GRAPHITIZATION; MONOLAYERS; QUANTUM COMPUTERS; SILICON; SILICON CARBIDE; SILICON WAFERS; TRANSPORT PROPERTIES;

HIGH CARRIER MOBILITY; HIGH-TEMPERATURE ANNEALING; INSULATING SUBSTRATES; LARGE SCALE PRODUCTIONS; MAGNETO TRANSPORT PROPERTIES; SILICON CARBIDES (SIC); TECHNOLOGICAL APPLICATIONS; TERAHERTZ OSCILLATORS;

GRAPHENE;

EID: 60749097071     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2382     Document Type: Article

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