Role of boundary layer diffusion in vapor deposition growth of chalcogenide nanosheets: The case of GeS

ACS Nano

Volumn 6, Issue 10, 2012, Pages 8868-8877

  Li, Chun ^a,c   Huang, Liang ^a   Snigdha, Gayatri Pongur ^a   Yu, Yifei ^a   Cao, Linyou ^a,b  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

boundary layer; diffusion limited; layered compound; nanosheets; vapor deposition

Indexed keywords

CARRIER GAS; CRYSTALLINE QUALITY; DEPOSITION PROCESS; DIFFUSION DYNAMICS; DIFFUSION FLUXES; DIFFUSION LIMITED; EXPERIMENTAL CONDITIONS; GROWTH BEHAVIOR; HIGH GROWTH RATE; HIGH QUALITY; LAYERED COMPOUND; RATE DETERMINING STEP; SINGLE-CRYSTALLINE; SOURCE MATERIAL; TOTAL PRESSURE;

BOUNDARY LAYERS; CRYSTALLINE MATERIALS; DIFFUSION; GROWTH (MATERIALS); NANOSTRUCTURED MATERIALS; NANOWIRES; THIN FILMS; VAPOR DEPOSITION; VAPORS;

NANOSHEETS;

CHALCOGEN; GERMANIUM; NANOMATERIAL; SULFUR;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; DIFFUSION; GAS; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; SYNTHESIS; ULTRASTRUCTURE;

CHALCOGENS; CRYSTALLIZATION; DIFFUSION; GASES; GERMANIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SULFUR; SURFACE PROPERTIES;

EID: 84867758679     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn303745e     Document Type: Article

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