Carrier transport in high-mobility III-V quantum-well transistors and performance impact for high-speed low-power logic applications

IEEE Electron Device Letters

Volumn 29, Issue 10, 2008, Pages 1094-1097

  Dewey, Gilbert ^a   Hudait, Mantu K ^a   Lee, Kangho ^a   Pillarisetty, Ravi ^a   Rachmady, Willy ^a   Radosavljevic, Marko ^a   Rakshit, Titash ^a   Chau, Robert ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Effective carrier velocity; III V materials; InGaAs; InSb; Quantum well devices; Silicon

Indexed keywords

QUANTUM CHEMISTRY;

EFFECTIVE CARRIER VELOCITY; III-V MATERIALS; INGAAS; INSB; QUANTUM-WELL DEVICES; SILICON;

CARRIER MOBILITY;

EID: 54849375000     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2002945     Document Type: Article

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