Two-dimensional tunnel transistors based on Bi2Se3 thin film

IEEE Electron Device Letters

Volumn 35, Issue 1, 2014, Pages 129-131

  Zhang, Qin ^a   Iannaccone, Giuseppe ^a   Fiori, Gianluca ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Band to band tunneling (BTBT); Bi2Se 3; NEGF; subthreshold swing; transistor

Indexed keywords

BAND TO BAND TUNNELING; BI2SE 3; NEGF; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; ON/OFF CURRENT RATIO; SUBTHRESHOLD SWING; TUNNEL FIELD-EFFECT TRANSISTORS; ULTRALOW POWER APPLICATION;

CMOS INTEGRATED CIRCUITS; DRAIN CURRENT; ENERGY GAP; FIELD EFFECT TRANSISTORS; FILM THICKNESS; THIN FILMS; TRANSISTORS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84891542197     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2288036     Document Type: Article

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