Erratum: Integrated circuits and logic operations based on single-layer MoS2 (ACS Nano (2011) 5 (9934-9938) DOI: 10.1021/nn203715c);Integrated circuits and logic operations based on single-layer MoS 2

ACS Nano

Volumn 5, Issue 12, 2011, Pages 9934-9938

  Radisavljevic, Branimir ^a   Whitwick, Michael Brian ^a   Kis, Andras ^a  

^a EPFL   (Switzerland)

Author keywords

dichalcogenides; digital electronics; logic circuits; nanoelectronic devices; two dimensional materials

Indexed keywords

COMPUTER CIRCUITS; DIGITAL CIRCUITS; DIGITAL DEVICES; GEOMETRY; INTEGRATED CIRCUITS; LAYERED SEMICONDUCTORS; MINIATURE INSTRUMENTS; MOLYBDENUM COMPOUNDS; NANOELECTRONICS; TIMING CIRCUITS; TRANSISTORS;

DICHALCOGENIDES; DIGITAL ELECTRONICS; LOGICAL OPERATIONS; NANOELECTRONIC DEVICES; SHORT-CHANNEL EFFECT; TWO-DIMENSIONAL MATERIALS; TWO-DIMENSIONAL SEMICONDUCTORS; VERTICAL DIMENSIONS;

LOGIC CIRCUITS;

DISULFIDE; MOLYBDENUM; MOLYBDENUM DISULFIDE; NANOMATERIAL;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SIGNAL PROCESSING; SYSTEM ANALYSIS; ULTRASTRUCTURE;

DISULFIDES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MOLYBDENUM; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTORS; SIGNAL PROCESSING, COMPUTER-ASSISTED; SYSTEMS INTEGRATION; TRANSISTORS, ELECTRONIC;

EID: 84555223620     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn400553g     Document Type: Erratum

References (37)

1. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-Dimensional Atomic Crystals Proc. Natl. Acad. Sci. U. S. A. 2005, 102, 10451-10453 (Pubitemid 41061574)
2. Schwierz, F. Graphene Transistors Nat. Nanotechnol. 2010, 5, 487-496
3. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
4. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669 (Pubitemid 39440910)
5. Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh Electron Mobility in Suspended Graphene Solid State Commun. 2008, 146, 351-355
6. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-Dimensional Gas of Massless Dirac Fermions in Graphene Nature 2005, 438, 197-200 (Pubitemid 41599867)
7. Du, X.; Skachko, I.; Duerr, F.; Luican, A.; Andrei, E. Y. Fractional Quantum Hall Effect and Insulating Phase of Dirac Electrons in Graphene Nature 2009, 462, 192-195
8. Han, M. Y.; Ozyilmaz, B.; Zhang, Y. B.; Kim, P. Energy Band-Gap Engineering of Graphene Nanoribbons Phys. Rev. Lett. 2007, 98, 206805
9. Li, X.; Wang, X.; Zhang, L.; Lee, S.; Dai, H. Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors Science 2008, 319, 1229-1232 (Pubitemid 351323015)
10. Zhang, Y.; Tang, T.-T.; Girit, C.; Hao, Z.; Martin, M. C.; Zettl, A.; Crommie, M. F.; Shen, Y. R.; Wang, F. Direct Observation of a Widely Tunable Bandgap in Bilayer Graphene Nature 2009, 459, 820-823
11. Xia, F.; Farmer, D. B.; Lin, Y.-m.; Avouris, P. Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature Nano Lett. 2010, 10, 715-718
12. Sols, F.; Guinea, F.; Neto, A. H. C. Coulomb Blockade in Graphene Nanoribbons Phys. Rev. Lett. 2007, 99, 166803
13. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
14. 2 Several Molecular Layers Thick J. App. Phys. 1966, 37, 1928-1929
15. 2 Mater. Res. Bull. 1986, 21, 457-461
16. 2 on Mica: Studies by Means of Scanning Force Microscopy Surf. Sci. Lett. 1993, 289, L595-L598
17. Coleman, J. N.; Lotya, M.; ONeill, A.; Bergin, S. D.; King, P. J.; Khan, U.; Young, K.; Gaucher, A.; De, S.; Smith, R. J. et al. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials Science 2011, 331, 568-571
18. Kam, K. K.; Parkinson, B. A. Detailed Photocurrent Spectroscopy of the Semiconducting Group Vib Transition Metal Dichalcogenides J. Phys. Chem. 1982, 86, 463-467
19. Lebegue, S.; Eriksson, O. Electronic Structure of Two-Dimensional Crystals from Ab Initio Theory Phys. Rev. B 2009, 79, 115409
20. 2 Nano Lett. 2010, 10, 1271-1275
21. 2 Phys. Rev. B 2011, 83, 245213
22. Traversi, F.; Russo, V.; Sordan, R. Integrated Complementary Graphene Inverter Appl. Phys. Lett. 2009, 94, 223312
23. Li, S.-L.; Miyazaki, H.; Kumatani, A.; Kanda, A.; Tsukagoshi, K. Low Operating Bias and Matched Input-Output Characteristics in Graphene Logic Inverters Nano Lett. 2010, 10, 2357-2362
24. Yang, X.; Liu, G.; Balandin, A. A.; Mohanram, K. Triple-Mode Single-Transistor Graphene Amplifier and Its Applications ACS Nano 2010, 4, 5532-5538
25. Liu, L.; Kumar, S. B.; Ouyang, Y.; Guo, J. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors IEEE Trans. Electron Devices 2011, 58, 3042-3047
26. 2 Transistors Be? Nano Lett. 2011, 11, 3768-3773
27. Schwierz, F. Nanoelectronics: Flat Transistors Get Off the Ground Nat. Nanotechnol. 2011, 6, 135-136
28. Benameur, M. M.; Radisavljevic, B.; Heron, J. S.; Sahoo, S.; Berger, H.; Kis, A. Visibility of Dichalcogenide Nanolayers Nanotechnology 2011, 22, 125706
29. 2 Nano Lett. 2007, 7, 1643-1648 (Pubitemid 47140438)
30. Bohr, M. T.; Chau, R. S.; Ghani, T.; Mistry, K., The High-K Solution. IEEE Spectrum Oct 2007, 44, 29-35. (Pubitemid 47570274)
31. Mistry, K.; Allen, C.; Auth, C.; Beattie, B.; Bergstrom, D.; Bost, M.; Brazier, M.; Buehler, M.; Cappellani, A.; Chau, R. et al. A 45nm Logic Technology with High-K+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-Free Packaging Tech. Dig.-Int. Electron Devices Meet. 2007, 247-250
32. Duan, X.; Niu, C.; Sahi, V.; Chen, J.; Parce, J. W.; Empedocles, S.; Goldman, J. L. High-Performance Thin-Film Transistors Using Semiconductor Nanowires and Nanoribbons Nature 2003, 425, 274-278 (Pubitemid 37158399)
33. Liao, L.; Lin, Y.-C.; Bao, M.; Cheng, R.; Bai, J.; Liu, Y.; Qu, Y.; Wang, K. L.; Huang, Y.; Duan, X. High-Speed Graphene Transistors with a Self-Aligned Nanowire Gate Nature 2010, 467, 305-308
34. Wind, S. J.; Appenzeller, J.; Martel, R.; Derycke, V.; Avouris, P. Vertical Scaling of Carbon Nanotube Field-Effect Transistors Using Top Gate Electrodes Appl. Phys. Lett. 2002, 80, 3817 (Pubitemid 34637271)
35. Li, S.-L.; Miyazaki, H.; Lee, M. V.; Liu, C.; Kanda, A.; Tsukagoshi, K. Complementary-Like Graphene Logic Gates Controlled by Electrostatic Doping Small 2011, 7, 1552-1556
36. Gomez, L.; Aberg, I.; Hoyt, J. L. Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body N-Mosfets with Body Thickness Ranging from 2 to 25 nm IEEE Electron Device Lett. 2007, 28, 285-287
37. Frindt, R. F.; Yoffe, A. D. Physical Properties of Layer Structures: Optical Properties and Photoconductivity of Thin Crystals of Molybdenum Disulphide Proc. R. Soc. A 1963, 273, 69-83