Intrinsic and extrinsic performance limits of graphene devices on SiO 2

Nature Nanotechnology

Volumn 3, Issue 4, 2008, Pages 206-209

  Chen, Jian Hao ^a,b   Jang, Chaun ^a,b   Xiao, Shudong ^a,b   Ishigami, Masa ^a,b,c   Fuhrer, Michael S ^a,b  

^a UNIVERSITY OF MARYLAND   (United States)

^b University of Maryland   (United States)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE SCATTERING; CARRIER CONCENTRATION; ELECTROMAGNETIC WAVE EMISSION; GRAPHENE; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; PHONON SCATTERING; PHONONS; SILICA; SUBSTRATES; TEMPERATURE DISTRIBUTION; WHITE NOISE; YARN;

ACOUSTIC-PHONON SCATTERING; INORGANIC SEMICONDUCTORS; LINEAR DISPERSION RELATIONS; ROOM TEMPERATURE MOBILITY; ROOM-TEMPERATURE RESISTIVITY; SEMICONDUCTING CARBON NANOTUBES; TEMPERATURE DEPENDENCE; TEMPERATURE-DEPENDENT RESISTIVITY;

GRAPHENE DEVICES;

NANOTUBE; SILICON DIOXIDE;

ADSORPTION; ARTICLE; ATMOSPHERE; DESORPTION; DEVICE; ELECTRON; ENERGY; FIELD EFFECT TRANSISTOR; MATHEMATICAL COMPUTING; PHONON; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; TECHNOLOGY; TEMPERATURE DEPENDENCE;

EID: 41849125958     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2008.58     Document Type: Article

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