A graphene-based hot electron transistor

Nano Letters

Volumn 13, Issue 4, 2013, Pages 1435-1439

  Vaziri, Sam ^a   Lupina, Grzegorz ^b   Henkel, Christoph ^a   Smith, Anderson D ^a   Östling, Mikael ^a   Dabrowski, Jarek ^b   Lippert, Gunther ^b   Mehr, Wolfgang ^b   Lemme, Max C ^a,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b IHP   (Germany)

^c UNIVERSITY OF SIEGEN   (Germany)

Author keywords

Graphene; hot carrier transport; hot electrons; transistor; tunneling

Indexed keywords

HOT ELECTRON TRANSISTORS; ON/OFF CURRENT RATIO; SILICON TECHNOLOGIES; TRANSFER CHARACTERISTICS; WAFER SCALE;

ELECTRON TUNNELING; HOT CARRIERS; HOT ELECTRONS; SILICON; SILICON WAFERS; TRANSISTORS;

GRAPHENE;

GRAPHITE; NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; ELECTRON; EQUIPMENT DESIGN; NANOTECHNOLOGY; SEMICONDUCTOR;

ELECTRONS; EQUIPMENT DESIGN; GRAPHITE; NANOSTRUCTURES; NANOTECHNOLOGY; SILICON; TRANSISTORS, ELECTRONIC;

EID: 84876059579     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl304305x     Document Type: Article

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