High-mobility field-effect transistors based on transition metal dichalcogenides

Applied Physics Letters

Volumn 84, Issue 17, 2004, Pages 3301-3303

  Podzorov, V ^a   Gershenson, M E ^a   Kloc, Ch ^b   Zeis, R ^b   Bucher, E ^b  

^a RUTGERS UNIVERSITY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR OPERATION; MECHANICAL FLEXIBILITY; TRANSITION METAL DICHALOGENIDES (TMD); VAPOR PHASE TRANSPORT METHOD;

CARRIER MOBILITY; CHARGE CARRIERS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; SEMICONDUCTING SILICON; SINGLE CRYSTALS; THERMAL EFFECTS; TRANSITION METALS;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 2542481867     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1723695     Document Type: Article

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