Toward low-power electronics: Tunneling phenomena in transition metal dichalcogenides

ACS Nano

Volumn 8, Issue 2, 2014, Pages 1681-1689

  Das, Saptarshi ^a,b   Prakash, Abhijith ^b   Salazar, Ramon ^b   Appenzeller, Joerg ^b  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

low power; transistor; transition metal dichalcogenides; tunneling

Indexed keywords

EID: 84894637213     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn406603h     Document Type: Article

References (41)

1. Kuhn, K. J. Considerations for Ultimate CMOS Scaling IEEE Trans. Electron Devices 2012, 59, 1813-1828
2. Nowak, E. J. Advanced CMOS Scaling and FinFET Technology ECS Trans. 2012, 50, 3-16
3. Skotnicki, T.; Hutchby, J. A.; King, T. Toward the Introduction of New Materials and Structural Changes To Improve MOSFET Performance IEEE Circuit Device Mag. 2005, 21, 16-26
4. Lu, W.; Xie, P.; Lieber, C. M. Nanowire Transistor Performance Limits and Applications IEEE Trans. Electron Devices 2008, 55, 2859-2876
5. Appenzeller, J.; Knoch, J.; Björk, M. T. Toward Nanowire Electronics IEEE Trans. Nanotechnol. 2008, 55, 2827-2845
6. McEuen, P. L.; Fuhrer, M. S. Single-Walled Carbon Nanotube Electronics IEEE Trans. Nanotechnol. 2002, 1, 78-85
7. Appenzeller, J.; Knoch, J.; Martel, R.; Derycke, V.; Wind, S. J.; Member, S.; Avouris, P. Carbon Nanotube Electronics IEEE Trans. Nanotechnol. 2002, 1, 184-189
8. del Alamo, J. A. Nanometre-Scale Electronics with III-V Compound Semiconductors Nature 2011, 479, 317-323
9. Palacios, T. Graphene Electronics: Thinking Outside the Silicon Box Nat. Nanotechnol. 2011, 6, 464-465
10. Geim, A. K.; Novoselov, K. S. The Rise of Graphene Nat. Mater. 2007, 6, 183-191
11. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
12. 2 Crystals Nat. Commun. 2012, 3, 1011
13. 2 Field Effect Transistors Nano Lett. 2013, 13, 1983-1990
14. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides Nat. Nanotechnol. 2012, 7, 699-712
15. Appenzeller, J.; Lin, Y.-M.; Knoch, J.; Avouris, P. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors Phys. Rev. Lett. 2004, 93, 196805
16. Ionescu, A. M.; Riel, H. Tunnel Field Effect Transistors as Energy Efficient Electronic Switches Nature 2011, 479, 329-337
17. Choi, W. Y.; Park, B.; Lee, J. D.; Liu, T. K. Tunneling Field-Effect Transistors (TFETs) with Subthreshold Swing (SS) Less Than 60 mV/dec IEEE Electron Device Lett. 2007, 28, 743-745
18. Smith, J. T.; Das, S.; Appenzeller, J. Broken-Gap Tunnel MOSFET: A Constant-Slope Sub-60-mV/decade Transistor IEEE Electron Device Lett. 2011, 32, 1367-1369
19. Gopalakrishnan, K.; Griffin, P. B.; Plummer, J. D. Impact Ionization MOS (I-MOS)-Part I: Device and Circuit Simulations IEEE Trans. Electron Devices 2005, 52, 69-76
20. Gopalakrishnan, K.; Woo, R.; Jungemann, C.; Griffin, P. B.; Plummer, J. D. Impact Ionization MOS (I-MOS)-Part II: Experimental Results IEEE Trans. Electron Devices 2005, 52, 77-84
21. Akarvardar, K.; Eggimann, C.; Tsamados, D.; Chauhan, Y. S.; Wan, G. C.; Ionescu, A. M.; Member, S.; Howe, R. T.; Wong, H. P. Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic IEEE Trans. Electron Devices 2008, 55, 48-59
22. Salahuddin, S.; Datta, S. Use of Negative Capacitance To Provide Voltage Amplification for Low Power Nanoscale Devices Nano Lett. 2008, 8, 405-410
23. Das, S.; Appenzeller, J. On the Importance of Bandgap Formation in Graphene for Analog Device Applications IEEE Trans. Nanotechnol. 2011, 10, 1093-1098
24. 2 Nano Lett. 2013, 13, 2931-2936
25. Kumar, A.; Ahluwalia, P. K. Electronic Structure of Transition Metal Dichalcogenides Monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from Ab-Initio Theory: New Direct Band Gap Semiconductors Eur. Phys. J. B 2012, 85, 186
26. Johari, P.; Shenoy, V. B. Tuning the Electronic Properties of Semi-conducting Transition Metal Dichalcogenides by Applying Mechanical Strains ACS Nano 2012, 6, 5449-5456
27. 2 Nano Lett. 2010, 10, 1271-1275
28. 2 Nano Lett. 2013, 13, 4212-4216
29. 2 Thin Layers on Insulating Substrates Nano Lett. 2012, 12, 1538-1544
30. 2 Transistors Nano Lett. 2012, 12, 4674-4680
31. 2 Transistors with Scandium Contacts Nano Lett. 2013, 13, 100-105
32. Das, S.; Appenzeller, J. Where Does the Current Flow in Two-Dimensional Layered Systems? Nano Lett. 2013, 13, 3396-3402
33. 2 Phys. Status Solidi RRL 2013, 4, 268-273
34. 2 Field Effect Transistor. Device Res. Conf. 2013.
35. Lundstrom, M.; Guo, J. Nanoscale Transistors: Device Physics, Modeling and Simulation; Springer: Berlin, 2006.
36. Datta, S. Quantum Transport: Atom to Transistor; Cambridge University Press: Cambridge, 2005.
37. Liu, L.; Kumar, S. B.; Ouyang, Y.; Guo, J. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors IEEE Trans. Electron Devices 2011, 58, 3042-3047
38. 2 Field Effect Transistors with Enhanced Ambipolar Characteristics Appl. Phys. Lett. 2013, 103, 103501
39. Ma, N.; Jena, D. Interband Tunneling in Two-Dimensional Crystal Semiconductors Appl. Phys. Lett. 2013, 102, 132102
40. Liu, G.-B.; Shan, W.-Y.; Yao, Y.; Yao, W.; Xiao, D. Three-Band Tight-Binding Model for Monolayers of Group-VIB Transition Metal Dichalcogenides Phys. Rev. B. 2013, 88, 085433
41. Liu, L.; Kumar, S. B.; Ouyang, Y.; Guo, J. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors IEEE Trans. Electron Devices 2011, 58, 3042-3047