Black phosphorus field-effect transistors

Nature Nanotechnology

Volumn 9, Issue 5, 2014, Pages 372-377

  Li, Likai ^a   Yu, Yijun ^a   Ye, Guo Jun ^b   Ge, Qingqin ^a   Ou, Xuedong ^a   Wu, Hua ^a   Feng, Donglai ^a   Chen, Xian Hui ^b   Zhang, Yuanbo ^a  

^a FUDAN UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; PHOSPHORUS;

CURRENT MODULATION; CURRENT SATURATION; ELECTRONIC TECHNOLOGIES; IV CHARACTERISTICS; NANOELECTRONIC DEVICES; TRANSISTOR PERFORMANCE; TWO-DIMENSIONAL CRYSTALS; TWO-DIMENSIONAL MATERIALS;

FIELD EFFECT TRANSISTORS;

BLACK PHOSPHORUS; PHOSPHORUS; QUANTUM DOT; UNCLASSIFIED DRUG;

ARTICLE; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRODE; ELECTROMAGNETIC FIELD; FIELD EFFECT TRANSISTOR; MOLECULAR ELECTRONICS; NANODEVICE; PRIORITY JOURNAL; TEMPERATURE DEPENDENCE; THICKNESS;

EID: 84901193930     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2014.35     Document Type: Article

References (38)

1. Delhaès, P. Graphite and Precursors (Gordon & Breach Science, 2001
2. Brown, A. & Rundqvist, S. Refinement of the crystal structure of black phosphorus. Acta Crystallogr. 19, 684-685 (1965
3. Slater, J. C., Koster, G. F. &Wood, J. H. Symmetry and free electron properties of the gallium energy bands. Phys. Rev. 126, 1307-1317 (1962
4. Cartz, L., Srinivasa, S. R., Riedner, R. J., Jorgensen, J. D. & Worlton, T. G. Effect of pressure on bonding in black phosphorus. J. Chem. Phys. 71, 1718-1721 (1979
5. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004
6. Berger, C. et al. Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J. Phys. Chem. B 108, 19912-19916 (2004
7. Takao, Y. & Morita, A. Electronic structure of black phosphorus: Tight binding approach. Physica B&C 105, 93-98 (1981
8. Keyes, R. W. The electrical properties of black phosphorus. Phys. Rev. 92, 580-584 (1953
9. Warschauer, D. Electrical and optical properties of crystalline black phosphorus. J. Appl. Phys. 34, 1853-1860 (1963
10. Maruyama, Y., Suzuki, S., Kobayashi, K. & Tanuma, S. Synthesis and some properties of black phosphorus single crystals. Physica B&C 105, 99-102 (1981
11. Akahama, Y., Endo, S. & Narita, S. Electrical properties of black phosphorus single crystals. J. Phys. Soc. Jpn 52, 2148-2155 (1983
12. Rodin, A. S., Carvalho, A. & Neto, A. H. C. Strain-induced gap modification in black phosphorus. Preprint at http://arxiv.org/abs/1401.1801 (2014
13. Asahina, H., Shindo, K. & Morita, A. Electronic structure of black phosphorus in self-consistent pseudopotential approach. J. Phys. Soc. Jpn 51, 1193-1199 (1982
14. Jamieson, J. C. Crystal structures adopted by black phosphorus at high pressures. Science 139, 1291-1292 (1963
15. Vanderborgh, C. A. & Schiferl, D. Raman studies of black phosphorus from 0.25 to 7.7 GPa at 15 K. Phys. Rev. B 40, 9595-9599 (1989
16. Kawamura, H., Shirotani, I. & Tachikawa, K. Anomalous superconductivity in black phosphorus under high pressures. Solid State Commun. 49, 879-881 (1984
17. Wittig, J. & Matthias, B. T. Superconducting phosphorus. Science 160, 994-995 (1968
18. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotech. 6, 147-150 (2011
19. Radisavljevic, B. & Kis, A. Mobility engineering and a metal-insulator transition in monolayer MoS2. Nature Mater. 12, 815-820 (2013
20. Heyd, J., Scuseria, G. E. & Ernzerhof, M. Hybrid functionals based on a screened Coulomb potential. J. Chem. Phys. 118, 8207-8215 (2003
21. Heyd, J., Peralta, J. E., Scuseria, G. E. & Martin, R. L. Energy band gaps and lattice parameters evaluated with the Heyd-Scuseria-Ernzerhof screened hybrid functional. J. Chem. Phys. 123, 174101 (2005
22. Marsman, M., Paier, J., Stroppa, A. & Kresse, G. Hybrid functionals applied to extended systems. J. Phys. 20, 064201 (2008
23. Schwierz, F. Graphene transistors. Nature Nanotech. 5, 487-496 (2010
24. Liu, H., Neal, A. T. & Ye, P. D. Channel length scaling of MoS2 MOSFETs. ACS Nano 6, 8563-8569 (2012
25. Das, S., Chen, H-Y., Penumatcha, A V. & Appenzeller, J. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 13, 100-105 (2013
26. Knoch, J., Zhang, M., Appenzeller, J. & Mantl, S. Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors. Appl. Phys. A 87, 351-357 (2007
27. Fontana, M. et al. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions. Sci. Rep. 3, 1634 (2013
28. Schroder, D. K. Semiconductor Material and Device Characterization (Wiley, 2006
29. Chen, J-H., Jang, C., Xiao, S., Ishigami, M. & Fuhrer, M. S. Intrinsic and extrinsic performance limits of graphene devices on SiO2. Nature Nanotech. 3, 206-209 (2008
30. Chen, F., Xia, J., Ferry, D K. & Tao, N. Dielectric screening enhanced performance in graphene FET. Nano Lett. 9, 2571-2574 (2009
31. Morozov, S. V. et al. Giant intrinsic carrier mobilities in graphene and its bilayer. Phys. Rev. Lett. 100, 016602 (2008
32. Sze, S M. & Ng, K. K. Physics of Semiconductor Devices (Wiley, 2006
33. Kaasbjerg, K., Thygesen, K. S. & Jacobsen, K. W. Phonon-limited mobility in n-Type single-layer MoS2 from first principles. Phys. Rev. B 85, 115317 (2012
34. Petaccia, L. et al. BaDElPh: A normal-incidence monochromator beamline at Elettra. Nucl. Instrum. Methods 606, 780-784 (2009
35. Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953-17979 (1994
36. Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758-1775 (1999
37. Kresse, G. & Furthmuller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169-11186 (1996).
38. Krukau, A. V., Vydrov, O. A., Izmaylov, A. F. & Scuseria, G. E. Influence of the exchange screening parameter on the performance of screened hybrid functionals. J. Chem. Phys. 125, 224106 (2006