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Volumn 20, Issue 18, 2010, Pages 3117-3124

Graphene solution-gated field-effect transistor array for sensing applications

(11) Dankerl, Markus a Hauf, Moritz V a Lippert, Andreas a Hess, Lucas H a Birner, Stefan a Sharp, Ian D a Mahmood, Ather b Mallet, Pierre b Veuillen, Jean Yves b Stutzmann, Martin a Garrido, Jose A a

a WALTER SCHOTTKY INSTITUT (Germany)

b LABORATOIRE DE CRISTALLOGRAPHIE (France)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS ELECTROLYTE; AQUEOUS ENVIRONMENT; BIOELECTRONIC APPLICATIONS; DIRECT DETERMINATION; ELECTROLYTE GATE; GATE POTENTIALS; GRAPHENE TRANSISTORS; HALL EFFECT MEASUREMENT; HIGH SENSITIVITY; LOW NOISE; MICROSCOPIC STRUCTURES; ON-CHIP STRUCTURES; SENSING APPLICATIONS; SI-BASED DEVICES;

BIOSENSORS; CARRIER MOBILITY; ELECTROLYTES; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; PHASE INTERFACES; TRANSCONDUCTANCE;

GRAPHENE;

EID: 77957202500 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201000724 Document Type: Article

Times cited : (147)

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