How good can monolayer MoS2 transistors be?

Nano Letters

Volumn 11, Issue 9, 2011, Pages 3768-3773

  Yoon, Youngki ^a   Ganapathi, Kartik ^a   Salahuddin, Sayeef ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

device physics; field effect transistor; layered materials; Molybdenum disulfide (MoS2); NEGF; quantum transport

Indexed keywords

DEVICE PHYSICS; LAYERED MATERIAL; MOLYBDENUM DISULFIDE (MOS2); NEGF; QUANTUM TRANSPORT;

ENERGY GAP; FIELD EFFECT TRANSISTORS; GREEN'S FUNCTION; MOLYBDENUM; MOLYBDENUM COMPOUNDS; MONOLAYERS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

TRANSISTORS;

EID: 80052790285     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2018178     Document Type: Article

References (24)

1. Wilson, J. A.; Yoffe, A. D. Adv. Phys. 1969, 18, 193
2. Gourmelon, E.; Lignier, O.; Hadouda, H.; Couturier, G.; Bernede, J. C.; Tedd, J.; Pouzed, J.; Salardenne, J. Sol. Energy Mater. Sol. Cells 1997, 46, 115
3. Ho, W. K.; Yu, J. C.; Lin, J.; Yu, J. G.; Li, P. S. Langmuir 2004, 20, 5865
4. Zong, X.; Yan, H.; Wu, G.; Ma, G.; Wen, F.; Wang, L.; Li, C. J. Am. Chem. Soc. 2008, 130, 7176
5. Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Phys. Rev. Lett. 2010, 105, 136805
6. Splendiani, A.; Sun, L.; Zhang, Y.; Li, T.; Kim, J.; Chim, C. -Y.; Galli, G.; Wang, F. Nano Lett. 2010, 10, 1271
7. Radisavljevic, B.; Radenovi, A.; Brivio, J.; Giacometti, V.; Kis, A. Nat. Nanotechnol. 2011, 6, 147
8. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451
9. Gmelin Handbook of Inorganic and Organometallic Chemistry, 8th ed.; Springer-Verlag: Berlin, 1995; Vol. B7.
10. Frindt, R. F. J. Appl. Phys. 1965, 37, 1928
11. Lebègue, S.; Eriksson, E. Phys. Rev. B 2009, 79, 115409
12. Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Solid State Commun. 2008, 146, 351
13. Chen, F.; Xia, J.; Ferry, D. K.; Tao, N. Nano Lett. 2009, 9, 2571
14. Jena, D.; Konar, A. Phys. Rev. Lett. 2007, 98, 136805
15. Szczyrbowski, J. J. Phys. D 1986, 19, 1257
16. Molybdenum Disulfide; Kee Hing Cheung Kee Co., Ltd: Hong Kong, http://www.khck.hk/adgoogle/Molybdenum-Disulfide.htm (accessed July 12, 2011).
17. Sze, S. M. Physics of Semiconductor Devices, 3rd ed.; Wiley-Interscience: Hoboken, NJ, 2006.
18. Lundstrom, M. Physics of Nanoscale MOSFETs, https://nanohub.org/ resources/5306
19. Datta, S. Quantum Transport: Atom to Transistor, 2nd ed.; Cambridge University Press: Cambridge and New York, 2005.
20. Taur, Y.; Ning, T. H Fundamentals of Modern VLSI Devices; Cambridge University Press: Cambridge and New York, 1998.
21. Radosavljevic, M.; Chu-Kung, B.; Corcoran, S.; Dewey, G.; Hudait, M. K.; Fastenau, J. M.; Kavalieros, J.; Liu, W. K.; Lubyshev, D.; Metz, M.; Millard, K.; Mukherjee, N.; Rachmady, W.; Shah, U.; Chau, Robert IEDM Tech. Dig. 2009, 319
22. Schwierz, Frank Nat. Nanotechnol. 2010, 89, 487
23. Wang, X.; Ouyang, Y.; Li, X.; Wang, H.; Guo, J.; Dai, H. Phys. Rev. Lett. 2008, 100, 206803
24. Liao, L.; Bai, J.; Cheng, R.; Lin, Y.-C.; Jiang, S.; Huang, Y.; Duan, X. Nano Lett. 2010, 10, 1917