Phosphorene: An unexplored 2D semiconductor with a high hole mobility

ACS Nano

Volumn 8, Issue 4, 2014, Pages 4033-4041

  Liu, Han ^a   Neal, Adam T ^a   Zhu, Zhen ^b   Luo, Zhe ^a   Xu, Xianfan ^a   Tománek, David ^b   Ye, Peide D ^a  

^a Purdue University   (United States)

^b MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

anisotropic transport; inverter; phosphorene; transistor

Indexed keywords

ANISOTROPY; ENERGY GAP; FIELD EFFECT TRANSISTORS; GRAPHENE; MOLYBDENUM COMPOUNDS; TRANSISTORS;

AB INITIO CALCULATIONS; ANISOTROPIC TRANSPORT; FIELD-EFFECT MOBILITIES; INVERTER; PHOSPHORENE; PHOTOLUMINESCENCE PEAK; SEMICONDUCTING MATERIALS; STRUCTURAL ANISOTROPY;

HOLE MOBILITY;

EID: 84898060562     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn501226z     Document Type: Article

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