Graphene transistors

Nature Nanotechnology

Volumn 5, Issue 7, 2010, Pages 487-496

  Schwierz, Frank ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ECONOMIC AND SOCIAL EFFECTS; FIELD EFFECT TRANSISTORS; GRAPHENE; NANORIBBONS;

CHANNEL LENGTH; CONDENSED MATTER; CURRENT SATURATION; GRAPHENE FIELD-EFFECT TRANSISTORS; GRAPHENE NANORIBBONS; RADIO-FREQUENCY APPLICATIONS; REAL APPLICATIONS; SHORT-CHANNEL EFFECT;

GRAPHENE TRANSISTORS;

GRAPHENE; NANORIBBON;

ELECTRIC POTENTIAL; ELECTRON; FIELD EFFECT TRANSISTOR; PRIORITY JOURNAL; RADIOFREQUENCY; REVIEW; SEMICONDUCTOR;

EID: 77955231284     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2010.89     Document Type: Review

References (102)

1. Novoselov, K. S. et al. Electric feld efect in atomically thin carbon flms. Science 306, 666-669 (2004).
2. Te International Technology Roadmap for Semiconductors http://www.itrs.net/Links/2009ITRS/Home2009.htm (Semiconductor Industry Association, 2009).
3. Geim, A. K. & Novoselov, K. S. Te rise of graphene. Nature Mater. 6, 183-191 (2007).
4. Geim, A. K. Graphene: status & prospects. Science 324, 1530-1534 (2009).
5. Castro Neto, A. H. et al. Te electronic properties of graphene. Rev. Mod. Phys. 81, 109-162 (2009).
6. Moore, G. E. in Tech. Dig. ISSCC 20-23 (IEEE, 2003).
7. Schwierz, F., Wong, H. & Liou, J. J. Nanometer CMOS (Pan Stanford, 2010).
8. Schwierz, F. & Liou, J. J. Modern Microwave Transistors-Teory, Design, and Performance (Wiley, 2003).
9. Schwierz, F. & Liou, J. J. RF transistors: recent developments and roadmap toward terahertz applications. Solid-State Electron. 51, 1079-1091 (2007).
10. Taur, Y. & Ning, T. H Fundamentals of Modern VLSI Devices (Cambridge Univ. Press, 1998).
11. Frank, D. J., Taur, Y. & Wong, H-S. P. Generalized scale length for two-dimensional efects in MOSFETs. IEEE Electron Dev. Lett. 19, 385-387 (1998).
12. Aberg, I. & Hoyt, J. L. Hole transport in ultra-thin-body MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm. IEEE Electron Dev. Lett. 26, 661-663 (2005).
13. Tompson, S. E. et al. In search of "forever", continued transistor scaling one new material at a time. IEEE Trans. Semicond. Manuf. 18, 26-36 (2005).
14. Uyemura, J. P. CMOS Logic Circuit Design (Kluwer Academic, 1999).
15. Hughes, B. & Tasker, P. J. Bias dependence of the MODFET intrinsic model elements values at microwave frequencies. IEEE Trans. Electron. Dev. 36, 2267-2273 (1989).
16. Nguyen, L. D. et al. in Tech. Dig. IEDM 176-179 (IEEE, 1988).
17. Boehm, H. P., Clauss, A., Hofmann, U. & Fischer, G. O. Dünnste Kohlenstof-Folien. Z. Naturforsch. B 17, 150-153 (1962).
18. May, J. W. Platinum surface LEED rings. Surf. Sci. 17, 267-270 (1969).
19. van Bommel, A. J., Crombeen, J. E. & van Tooren, A. LEED and Auger electron observations of the SiC (0001) surface. Surf. Sci. 48, 463-472 (1975).
20. Kim, K-S. et al. Large-scale pattern growth of graphene flms for stretchable transparent electrodes. Nature 457, 706-710 (2009).
21. Reina, A. et al. Large area, few-layer graphene flms on arbitrary substrates by chemical vapor deposition. Nano Lett. 9, 30-35 (2009).
22. Berger, C. et al. Electronic confnement and coherence in patterned epitaxial graphene. Science 312, 1191-1196 (2006).
23. Kedzierski, J. et al. Epitaxial graphene transistors on SiC substrates. IEEE Trans. Electron. Dev. 55, 2078-2085 (2008).
24. Han, M. et al. Energy band-gap engineering of graphene nanoribbons. Phys. Rev. Lett. 98, 206805 (2007).
25. Kim, P. et al. in Tech. Dig. IEDM 241-244 (IEEE, 2009).
26. Li, X., Wang, X., Zhang, L., Lee, S. & Dai, H. Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Science 319, 1229-1232 (2008).
27. Chen, Z., Lin, Y-M., Rooks, M. J. & Avouris, Ph. Graphene nano-ribbon electronics. Physica E 40, 228-232 (2007).
28. Yang, L. et al. Quasiparticle energies and band gaps in graphene nanoribbons. Phys. Rev. Lett. 99, 186801 (2007).
29. Evaldsson, M., Zozoulenko, I. V., Xu, H. & Heinzel, T. Edge-disorder-induced Anderson localization and conduction gap in graphene nanoribbons. Phys. Rev. B 78, 161407 (2008).
30. Castro, E. V. et al. Biased bilayer graphene: semiconductor with a gap tunable by the electric feld efect. Phys. Rev. Lett. 99, 216802 (2007).
31. Gava, P., Lazzeri, M., Saitta, A. M. & Mauri, F. Ab initio study of gap opening and screening efects in gated bilayer graphene. Phys. Rev. B 79, 165431 (2009).
32. Ohta, T., Bostwick, A., Seyller, T., Horn, K. & Rotenberg, E. Controlling the electronic structure of bilayer graphene. Science 313, 951-954 (2006).
33. Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820-823 (2009).
34. Rotenberg, E. et al. and Zhou, S. Y. et al. Origin of the energy bandgap in epitaxial graphene. Nature Mater. 7, 258-260 (2008).
35. Zhou, S. Y. et al. Substrate-induced bandgap opening in epitaxial graphene. Nature Mater. 6, 770-775 (2007).
36. Kim, S., Ihm, J., Choi, H. J. & Son, Y-W. Origin of anomalous electronic structures of epitaxial graphene on silicon carbide. Phys. Rev. Lett. 100, 176802 (2008).
37. Bostwick, A., Ohta, T., Seyller, T., Horn, K. & Rotenberg, E. Quasiparticle dynamics in graphene. Nature Phys. 3, 36-40 (2007).
38. Peng, X. & Ahuja, R. Symmetry breaking induced bandgap in epitaxial graphene layers on Si. Nano Lett. 8, 4464-4468 (2008).
39. Sano, E. & Otsuji, T. Teoretical evaluation of channel structure in graphene feld-efect transistors. Jpn. J. Appl. Phys. 48, 041202 (2009).
40. Pereira, V. M., Castro Neto, A. H. & Peres, N. M. R. Tight-binding approach to uniaxial strain in graphene. Phys. Rev. B 80, 045401 (2009).
41. Ni, Z. H. et al. Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening. ACS Nano 2, 2301-2305 (2008); erratum 3, 483 (2009).
42. Sols, F., Guinea, F. & Castro Neto, A. H. Coulomb blockade in graphene nanoribbons. Phys. Rev. Lett. 99, 166803 (2007).
43. Han, M. Y., Brant, J. C. & Kim, P. Electron transport in disordered graphene nanoribbons. Phys. Rev. Lett. 104, 056801 (2010).
44. Cervantes-Sodi, F., Csanyi, G., Picanec, S. & Ferrari, A. C. Edge-functionalized and substitutionally doped graphene nanoribbons: electronic and spin properties. Phys. Rev. B 77, 165427 (2008).
45. Jiao, J., Wang, X., Diankov, G., Wang, H. & Dai, H. Facile synthesis of high-quality graphene nanoribbons. Nature Nanotech. 5, 321-325 (2010).
46. Raza, H. & Kan, E. C. Armchair graphene nanoribbons: electronic structure and electric-feld modulation. Phys. Rev. B 77, 245434 (2008).
47. 2. Nature Nanotech. 3, 206-209 (2008).
48. Chen, F., Xia, J., Ferry, D. K. & Tao, N. Dielectric screening enhanced performance in graphene FET. Nano Lett. 9, 2571-2574 (2009).
49. Morozov, V. S. et al. Giant intrinsic carrier mobilities in graphene and its bilayer. Phys. Rev. Lett. 100, 016602 (2008).
50. Geim, A. Graphene update. Bull. Am. Phys. Soc. 55, abstr. J21.0004, http://meetings.aps.org/link/BAPS.2010.MAR.J21.4 (2010).
51. Emtsev, K. V. et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Mater. 8, 203-207 (2009).
52. Lemme, M. C., Echtermeyer, T. J., Baus, M. & Kurz, H. A graphene feld-efect device. IEEE Electron Dev. Lett. 28, 282-284 (2007).
53. Lin, Y-M. et al. Operation of graphene transistors at gigahertz frequencies. Nano Lett. 9, 422-426 (2009).
54. Liao, L. et al. High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors. Proc. Natl Acad. Sci. USA 107, 6711-6715 (2010).
55. Farmer, D. B. et al. Utilization of a bufered dielectric to achieve high feld-efect carrier mobility in graphene transistors. Nano Lett. 9, 4474-4478 (2009).
56. Zhou, X., Park, J-Y., Huang, S., Liu, J. & McEuen, P. L. Band structure, phonon scattering, and performance limit of single-walled carbon nanotube transistors. Phys. Rev. Lett. 95, 146805 (2005).
57. Perebeinos, V., Tersof, J. & Avouris, Ph. Electron-phonon interaction and transport in semiconducting carbon nanotubes. Phys. Rev. Lett. 94, 0786802 (2005).
58. Obradovic, B. et al. Analysis of graphene nanoribbons as a channel material for feld-efect transistors. Appl. Phys. Lett. 88, 142102 (2006).
59. Fang, T., Konar, A., Xing, H. & Jena, D. Mobility in semiconducting nanoribbons: phonon, impurity, and edge roughness scattering. Phys. Rev. B 78, 205403 (2008).
60. Bresciani, M., Palestri, P., Esseni, D. & Selmi, L. in Proc. ESSDERC '09 480-483 (IEEE, 2009).
61. Betti, A., Fiori, G., Iannaccone, G. & Mao, Y. in Tech. Dig. IEDM 2009 897-900 (IEEE, 2009).
62. Wang, X. et al. Room-temperature all-semiconducting sub-10-nm graphene nanoribbon feld-efect transistors. Phys. Rev. Lett. 100, 206803 (2008).
63. Akturk, A. & Goldsman, N. Electron transport and full-band electron-phonon interactions in graphene. J. Appl. Phys. 103, 053702 (2008).
64. Shishir, R. S. & Ferry, D. K. Velocity saturation in intrinsic graphene. J. Phys. Condens. Matter 21, 344201 (2009).
65. Barreiro, A., Lazzeri, M., Moser, J., Mauri, F. & Bachtold, A. Transport properties of graphene in the high-current limit. Phys. Rev. Lett. 103, 076601 (2009).
66. Schroder, D. K. Semiconductor Material and Device Characterization (Wiley, 1990).
67. Fang, T., Konar, A., Xing, H. & Jena, D. Carrier statistics and quantum capacitance of graphene sheets and nanoribbons. Appl. Phys. Lett. 91, 092109 (2007).
68. Chen, Z. & Appenzeller, J. in Tech. Dig. IEDM 2008, paper 21.1 (IEEE, 2008).
69. Meric, I., Baklitskaya, N., Kim, P. & Shepard, K. L. in Tech. Dig. IEDM 2008, paper 21.2 (IEEE, 2008).
70. Meric, I. et al. Current saturation in zero-bandgap, top-gated graphene feld-efect transistors. Nature Nanotech. 3, 654-659 (2008).
71. Kedzierski, J. et al. Graphene-on-insulator transistors made using C on Ni chemical-vapor deposition. IEEE Electron Dev. Lett. 30, 745-747 (2009).
72. Li, X. et al. Large-area synthesis of high-quality and uniform graphene flms on copper foils. Science 324, 1312-1314 (2009).
73. Lin, Y-M. et al. 100-GHz transistors from wafer-scale epitaxial graphene. Science 327, 662 (2010).
74. Moon, J. S. et al. Epitaxial-graphene RF feld-efect transistors on Si-face 6H-SiC substrates. IEEE Electron Dev. Lett. 30, 650-652 (2009).
75. Tahy, K. et al. in Proc. Dev. Res. Conf. 2009 207-208 (IEEE, 2009).
76. Tiele, S., Schaefer, J. A. & Schwierz, F. Modeling of graphene metal-oxide-semiconductor feld-efect transistors with gapless large-area graphene channels. J. Appl. Phys. 107, 094505 (2010).
77. T of 50 GHz. IEEE Electron Dev. Lett. 31, 68-70 (2010).
78. Nougaret, N. et al. 80 GHz feld-efect transistors produced using high purity semiconducting single-walled carbon nanotubes. Appl. Phys. Lett. 94, 243505 (2009).
79. Rutherglen, C., Jain, D. & Burke, P. Nanotube electronics for radiofrequency applications. Nature Nanotech. 4, 811-819 (2009).
80. Yoon, Y. & Guo, J. Efects of edge roughness in graphene nanoribbon transistors. Appl. Phys. Lett. 91, 073103 (2007).
81. Basu, D., Gilbert, M. J., Register, L. F., Banerjee, S. K. & MacDonald, A. H. Efect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor feld-efect transistors. Appl. Phys. Lett. 92, 042114 (2008).
82. Liao, L. et al. Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics. Nano Lett. 10, 1917-1921 (2010).
83. Xia, F., Farmer, D. B., Lin, Y-M. & Avouris, Ph. Graphene feld-efect transistors with high on/of current ratio and large transport band gap at room temperature. Nano Lett. 10, 715-718 (2010).
84. Iannaccone, G. et al. in Tech. Dig. IEDM 2009 245-248 (IEEE, 2009).
85. Nagashio, K., Nishimura, T., Kita, K. & Toriumi, A. in Tech. Dig. IEDM 2009 565-568 (IEEE, 2009).
86. Russo, S., Cracuin, M. F., Yamamoto, Y., Morpurgo, A. F. & Tarucha, S. Contact resistance in graphene-based devices. Physica E 42, 677-679 (2010).
87. Huard, B., Stander, N., Sulpizio, J. A. & Goldhaber-Gordon, D. Evidence of the role of contacts on the observed electron-hole asymmetry in graphene. Phys. Rev. B 78, 121402 (2008).
88. Boucart, K. & Ionescu, A. M. Double-gate tunnel FET with high-κ gate dielectric. IEEE Trans. Electron. Dev. 54, 1725-1733 (2007).
89. Appenzeller, J., Lin, Y-M., Knoch, J. & Avouris, Ph. Band-to-band tunneling in carbon nanotube feld-efect transistor. Phys. Rev. Lett. 93, 196805 (2004).
90. Luisier, M. & Klimeck, G. in Proc. Dev. Res. Conf. 2009 201-202 (IEEE, 2009).
91. Fiori, G. & Iannaccone, G. Ultralow-voltage bilayer graphene tunnel FET. IEEE Electron Dev. Lett. 30, 1096-1098 (2009).
92. Banerjee, S. K., Register, L. F., Tutuc, E., Reddy, D. & MacDonald, A. H. Bilayer pseudospin feld-efect transistor (BiSFET): a proposed new logic device. IEEE Electron Dev. Lett. 30, 158-160 (2009).
93. Murali, R., Brenner, K., Yang, Y., Beck, T. & Meindl, J. D. Resistivity of graphene nanoribbon interconnects. IEEE Electron Dev. Lett. 30, 611-613 (2009).
94. Awano, Y. in Tech. Dig. IEDM, 2009:233-236 (IEEE, 2009).
95. Moser, J., Barreiro, A. & Bachtold, A. Current-induced cleaning of graphene. Appl. Phys. Lett. 91, 163513 (2007).
96. Balandin, A. A. et al. Superior thermal conductivity of single-layer graphene. Nano Lett. 8, 902-907 (2008).
97. Ferry, D. K., Gilbert, M. J. & Akis, R. Some considerations on nanowires in nanoelectronics. IEEE Trans. Electron. Dev. 55, 2820-2826 (2008).
98. Iijima, S. Helical microtubules of graphitic carbon. Nature 354, 56-58 (1991).
99. Tans, S. J., Verschueren, A. R. M. & Dekker, C. Room-temperature transistor based on a single carbon nanotube. Nature 393, 49-52 (1998).
100. Li, S., Yu, Z., Yen, S-F., Tang, W. C. & Burke, P. J. Carbon nanotube transistor operation at 2.6 GHz. Nano Lett. 4, 753-756 (2004).
101. Lee, S. et al. in Tech. Dig. IEDM 2007 255-258 (IEEE, 2007).
102. Nguyen, L. D., Tasker, P. J., Radulescu, D. C. & Eastman, L. F. Characterization of ultra-high-speed AlGaAs/InGaAs (on GaAs) MODFETs. IEEE Trans. Electron. Dev. 36, 2243-2248 (1989).