100-GHz transistors from wafer-scale epitaxial graphene

Science

Volumn 327, Issue 5966, 2010, Pages 662-

  Lin, Y M ^a   Dimitrakopoulos, C ^a   Jenkins, K A ^a   Farmer, D B ^a   Chiu, H Y ^a   Grill, A ^a   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; METAL OXIDE; SILICON;

ELECTRONIC EQUIPMENT; EXPERIMENTAL STUDY; FREQUENCY ANALYSIS; QUANTUM MECHANICS; WATER;

DIELECTRIC CONSTANT; ELECTRIC CURRENT; ELECTRON; ELECTRONICS; PRIORITY JOURNAL; RADIOFREQUENCY; SEMICONDUCTOR; SHORT SURVEY;

EID: 76249106631     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1184289     Document Type: Short Survey

References (8)

1. I. Meric, N. Baklitskaya, P. Kim, K. L. Shepard, in Electron Devices Meeting, 2008 (IEDM 2008), IEEE International, San Francisco, 15 to 17 December 2008, pp. 1-4.
2. Y.-M. Lin et al., Nano Lett. 9, 422 (2009).
3. J. S. Moon et al., IEEE Electron Device Lett. 30, 650 (2009).
4. Materials and methods are available as supporting material on Science On line.
5. D. B. Farmer et al., Nano Lett. 9, 4474 (2009).
6. www.itrs.net/Links/2008ITRS/Home2008.htm
7. T. Also see (4).
8. Supported by Defense Advanced Research Projects Agency under contract FA8650-08-C-7838 through the Carbon Electronics for RF Applications program.