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Volumn 114, Issue 8, 2013, Pages

PH sensing properties of graphene solution-gated field-effect transistors

(10) Mailly Giacchetti, Benjamin a Hsu, Allen b Wang, Han b Vinciguerra, Vincenzo c Pappalardo, Francesco c Occhipinti, Luigi c Guidetti, Elio c Coffa, Salvatore c Kong, Jing b Palacios, Tomás b

a Massachusetts Institute of Technology (United States)

b Department of Electrical Engineering and Computer Science (United States)

c STMICROELECTRONICS (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT SUBSTRATES; ELECTRICAL DOUBLE-LAYER CAPACITANCES; ELECTRICAL RESPONSE; FABRICATION METHOD; FLEXIBLE SUBSTRATE; SPECIFIC SUBSTRATES; SURFACE TRANSFER DOPING; TRANSPARENT GRAPHENE;

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ETHYLENE; FABRICATION; FIELD EFFECT TRANSISTORS; PH SENSORS; SUBSTRATES;

GRAPHENE;

EID: 84883851450 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4819219 Document Type: Article

Times cited : (92)

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