MoS2 Field-Effect transistors with graphene/metal heterocontacts

IEEE Electron Device Letters

Volumn 35, Issue 5, 2014, Pages 599-601

  Du, Yuchen ^a   Yang, Lingming ^a   Zhang, Jingyun ^a   Liu, Han ^a   Majumdar, Kausik ^b   Kirsch, Paul D ^b   Ye, Peide D ^a  

^a Purdue University   (United States)

^b SEMATECH   (United States)

Author keywords

graphene; heterocontacts; MoS; MOSFET; Schottky barrier height.

Indexed keywords

CONTACT RESISTANCE; FIELD EFFECT TRANSISTORS; GRAPHENE; SEMICONDUCTOR METAL BOUNDARIES;

ELECTRICAL CHARACTERISTIC; FIELD EFFECT TRANSISTOR (FETS); HETEROCONTACTS; MOS; MOS-FET; SCHOTTKY BARRIER HEIGHTS; TEMPERATURE DEPENDENT; TRANSFER LENGTH METHODS;

MOLYBDENUM COMPOUNDS;

EID: 84899727876     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2313340     Document Type: Article

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