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Volumn , Issue , 2012, Pages

Insights on radio frequency bilayer graphene FETs

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; BETTER PERFORMANCE; CHANNEL MATERIALS; GAIN FREQUENCIES; LOW FREQUENCY VOLTAGE; OUTPUT RESISTANCE; RADIO FREQUENCIES; RADIO FREQUENCY APPLICATIONS;

EID: 84876149846     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479059     Document Type: Conference Paper
Times cited : (18)

References (10)
  • 1
    • 79953758358 scopus 로고    scopus 로고
    • High-frequency, scaled graphene transistors on diamond-like carbon
    • Apr 2104
    • Yanqing Wu, Yu-Ming Lin, Ageeth A Bol, Keith A Jenkins, Fengnian Xia, Damon B Farmer, Yu Zhu, and Phaedon Avouris, "High-frequency, scaled graphene transistors on diamond-like carbon", Nature, vol. 472, no. 7341, pp. 74-78, Apr 2104.
    • Nature , vol.472 , Issue.7341 , pp. 74-78
    • Wu, Y.1    Lin, Y.2    Bol, A.A.3    Jenkins, K.A.4    Xia, F.5    Farmer, D.B.6    Zhu, Y.7    Avouris, P.8
  • 4
    • 84858233159 scopus 로고    scopus 로고
    • Current saturation and voltage gain in bilayer graphene field effect transistors
    • B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, "Current saturation and voltage gain in bilayer graphene field effect transistors", Nano Letters, vol. 12, no. 3, pp. 1324-1328, 2012.
    • (2012) Nano Letters , vol.12 , Issue.3 , pp. 1324-1328
    • Szafranek, B.N.1    Fiori, G.2    Schall, D.3    Neumaier, D.4    Kurz, H.5
  • 5
    • 84876128848 scopus 로고    scopus 로고
    • doi: 10254/nanohubr5116.5
    • "Available at http://www.nanohub.org/tools/vides. doi: 10254/nanohubr5116.5".
  • 7
    • 0020003561 scopus 로고
    • Capacitance calulations of mosfet vlsi
    • M I Elmasry, "Capacitance calulations of mosfet vlsi", IEEE Electr. Dev. Lett., vol. 3, pp. 6-7, 1982.
    • (1982) IEEE Electr. Dev. Lett , vol.3 , pp. 6-7
    • Elmasry, M.I.1
  • 9
    • 0344362751 scopus 로고    scopus 로고
    • edition -chapter 2: Process integration, devices, and structures. available at
    • "The international technology roadmap for semiconductors -2011 edition -chapter 2: Process integration, devices, and structures. available at http://www.itrs.net".
    • The International Technology Roadmap for Semiconductors - 2011
  • 10
    • 79953766791 scopus 로고    scopus 로고
    • Electronics: Industry-compatible graphene transistors
    • F. Schwierz, "Electronics: Industry-compatible graphene transistors", Nature, pp. 41-42, 2011.
    • (2011) Nature , pp. 41-42
    • Schwierz, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.