On monolayer MoS2 field-effect transistors at the scaling limit

IEEE Transactions on Electron Devices

Volumn 60, Issue 12, 2013, Pages 4133-4139

  Liu, Leitao ^a   Lu, Yang ^a   Guo, Jing ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Double gate field effect transistors (FETs); monolayer molybdenum disulfide MoS2; performance metrics; phonon scattering; ultimate scaling limit

Indexed keywords

DRAIN-INDUCED BARRIER LOWERING; FIELD EFFECT TRANSISTOR (FETS); INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; MOLYBDENUM DISULFIDE; PERFORMANCE METRICS; QUANTUM MECHANICAL EFFECTS; QUANTUM TRANSPORT SIMULATIONS; SCALING LIMITS;

FIELD EFFECT TRANSISTORS; LOGIC DEVICES; MOLYBDENUM; MOLYBDENUM COMPOUNDS; PHONON SCATTERING; QUANTUM ELECTRONICS; SILICON;

MONOLAYERS;

EID: 84889587365     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2284591     Document Type: Article

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