SymFET: A proposed symmetric graphene tunneling field-effect transistor

IEEE Transactions on Electron Devices

Volumn 60, Issue 3, 2013, Pages 951-957

  Zhao, Pei ^a   Feenstra, Randall M ^b   Gu, Gong ^c   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c University of Tennessee Knoxville   (United States)

Author keywords

Graphene; resonant tunneling devices; tunneling; vertical FETs

Indexed keywords

CHANNEL POTENTIAL; CHEMICAL DOPING; COHERENCE LENGTHS; CURRENT PEAK; DIGITAL LOGIC; DIRAC POINT; GATE BIAS; GRAPHENE LAYERS; HIGH-SPEED ANALOG; HIGHER ORDER HARMONICS; LARGE CURRENT; NONLINEAR CURRENT; ON/OFF RATIO; P-TYPE; RESONANT PEAKS; RESONANT TUNNELING DEVICE; SIMPLE ANALYSIS; TUNNELING FIELD-EFFECT TRANSISTORS; VERTICAL FETS;

ANALYTICAL MODELS; ELECTRON TUNNELING; GRAPHENE; MODELS; SEMICONDUCTOR DOPING;

DRAIN CURRENT;

EID: 84874646120     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2238238     Document Type: Article

References (18)

1. A. K. Geim and K. S. Novoselov, "The rise of graphene," Nat. Mater., vol. 6, no. 3, pp. 183-191, 2007. (Pubitemid 46353764)
2. A. H. Castro Neto and K. Novoselov, "Two-dimensional crystals: Beyond graphene," Mater. Exp., vol. 1, no. 1, pp. 10-17, Mar. 2011.
3. S. K. Banerjee, L. F. Register, E. Tutuc, D. Reddy, and A. H. MacDonald, "Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A proposed new logic device," IEEE Electron Device Lett., vol. 30, no. 2, pp. 158-160, Feb. 2009.
4. J. P. Eisenstein, L. N. Pfeiffer, and K. W. West, "Field-induced resonant tunneling between parallel two-dimensional electron systems," Appl. Phys. Lett., vol. 58, no. 14, pp. 1497-1499, Apr. 1991.
5. K. M. Brown, E. H. Linfield, D. A. Ritchie, G. A. C. Jones, M. P. Grinshaw, and M. Pepper, "Resonant tunneling between parallel, twodimensional electron gases: A new approach to device fabrication using in situ ion beam lithography and molecular beam epitaxy growth," Appl. Phys. Lett., vol. 64, no. 14, pp. 1827-1829, Apr. 1994.
6. C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, "Boron nitride substrates for high-quality graphene electronics," Nat. Nanotechnol., vol. 5, no. 10, pp. 722-726, 2010.
7. A. S. Mayorov, R. V. Gorbachev, S. V. Morozov, L. Britnell, R. Jalil, L. A. Ponomarenko, K. S. Novoselov, K. Watanabe, T. Taniguchi, and A. K. Geim, "Direct evidence for micron-scale ballistic transport in encapsulated graphene at room temperature," Nano Lett., vol. 11, pp. 2396- 2399, 2011.
8. L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, and L. A. Ponomarenko, "Field-effect tunneling transistor based on vertical graphene heterostructures," Science, vol. 335, no. 6071, pp. 947-950, Feb. 2012.
9. H. Yang, J. Heo, S. Park, H. J. Song, D. H. Seo, K.-E. Byun, P. Kim, I. Yoo, H.-J. Chung, and K. Kim, "Graphene barristor, a triode device with a gate-controlled Schottky barrier," Science, vol. 336, no. 6085, pp. 1140-1143, Jun. 2012.
10. A. C. Seabaugh and Q. Zhang, "Low voltage tunnel transistors for beyond CMOS logic," Proc. IEEE, vol. 98, no. 12, pp. 2095-2110, Dec. 2010.
11. R. M. Feenstra, D. Jena, and G. Gu, "Single-particle tunneling in doped graphene-insulator-graphene junctions," J. Appl. Phys., vol. 111, no. 4, pp. 043 711-1-043 711-10, Feb. 2012.
12. S. Luryi, "Quantum capacitance devices," Appl. Phys. Lett., vol. 52, no. 6, pp. 501-503, Feb. 1988.
13. K. M. Masum Habib, F. Zahid, and R. K. Lake, "Negative differential resistance in bilayer graphene," Appl. Phys. Lett., vol. 98, no. 19, pp. 192 112-1-192 112-3, May 2011.
14. G.-H. Lee, Y.-J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, "Electron tunneling through atomically flat and ultrathin hexagonal boron nitride," Appl. Phys. Lett., vol. 99, no. 24, pp. 243 114-1- 243 114-3, Dec. 2011.
15. C. R. Dean, A. F. Young, P. Cadden-Zimansky, L. Wang, H. Ren, K. Watanabe, T. Taniguchi, P. Kim, J. Hone, and K. L. Shepard, "Multicomponent fractional quantum Hall effect in graphene," Nat. Phys., vol. 7, no. 9, pp. 693-696, Sep. 2011.
16. H. Wang, A. Hsu, K. K. Kim, J. Kong, and T. Palacios, "Gigahertz ambipolar frequency multiplier based on CVD graphene," in Proc. IEDM, 2010, pp. 23.6.1-23.6.4.
17. H. Wang, A. Hsu, J. Wu, J. Kong, and T. Palacios, "Graphene-based ambipolar RF mixers," IEEE Electron Device Lett., vol. 31, no. 9, pp. 906-908, Sep. 2010.
18. A. Nagashima, N. Tejima, Y. Gamou, T. Kawai, and C. Oshima, "Electronic dispersion relations of monolayer hexagonal boron nitride formed on the Ni 111 surface," Phys. Rev. B, Condens. Matter, vol. 51, no. 7, pp. 4606-4613, Feb. 1995.