Current saturation in zero-bandgap, top-gated graphene field-effect transistors

Nature Nanotechnology

Volumn 3, Issue 11, 2008, Pages 654-659

  Meric, Inanc ^a   Han, Melinda Y ^a   Young, Andrea F ^a   Ozyilmaz, Barbaros ^a,b   Kim, Philip ^a   Shepard, Kenneth L ^a  

^a Columbia University ^*  (United States)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC PROPERTIES; ENERGY GAP; GRAPHENE; GRAPHENE TRANSISTORS; SILICA;

BAND GAP ENGINEERING; ELECTRONIC PROPERTIES OF GRAPHENE; ELECTROSTATIC MODULATION; GRAPHENE FIELD-EFFECT TRANSISTORS; RADIO FREQUENCY CIRCUIT; SATURATION VELOCITY; TRANSISTOR CHARACTERISTICS; TWO-DIMENSIONAL STRUCTURES;

FIELD EFFECT TRANSISTORS;

CARBON NANOTUBE; GRAPHENE; NANOMATERIAL; SILICON DIOXIDE; UNCLASSIFIED DRUG;

ARTICLE; CONDUCTANCE; ELECTRIC FIELD; ELECTRICITY; FIELD EFFECT TRANSISTOR; HYSTERESIS; PHONON; PRIORITY JOURNAL; VELOCITY;

EID: 57349090160     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2008.268     Document Type: Article

References (32)

1. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004).
2. Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197-200 (2005).
3. Zhang, Y., Tan, Y.-W., Stormer, H. L. & Kim, P. Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 438, 201-204 (2005).
4. Schedin, F. et al. Detection of individual gas molecules adsorbed on graphene. Nature Mater. 6, 652-655 (2007).
5. Fratini, S.& Guinea, F. Substrate-limited electron dynamics in graphene. Phys. Rev. B 77, 195415 (2008).
6. 2 . Nature Nanotech. 3, 206-209 (2008).
7. Javey, A. et al. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates. Nature Mater. 1, 241-246 (2002).
8. Javey, A. et al. Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays. Nano Lett. 4, 1319-1322 (2004).
9. Klinke, C., Chen, J., Afzali, A. & Avouris, P. Charge transfer induced polarity switching in carbon nanotube transistors. Nano Lett. 5, 555-558 (2005).
10. Kang, S. J. et al. High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. Nature Nanotech. 2, 230-236 (2007).
11. Avouris, P., Chen, Z. & Perebeinos, V. Carbon-based electronics. Nature Nanotech. 2, 605-615 (2007).
12. Akinwande, D., Close, G. F. & Wong, H. S. P. Analysis of the frequency response of carbon nanotube transistors. IEEE Trans. Nanotech. 5, 599-605 (2006).
13. Han, M. Y., Ozyilmaz, B., Zhang, Y. & Kim, P. Energy band-gap engineering of graphene nanoribbons. Phys. Rev. Lett. 98, 206805 (2007).
14. Chen, Z., Lin, Y. M., Rooks, M. J. & Avouris, P. Graphene nano-ribbon electronics. Phys. E 40, 228-232 (2007).
15. Li, X. et al. Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Science 319, 1229-1232 (2008).
16. Ohta, T. et al. Controlling the electronic structure of bilayer graphene. Science 313, 951-954 (2006).
17. Oostinga, J. B. et al. Gate-induced insulating state in bilayer graphene devices. Nature Mater. 7, 151-157 (2008).
18. Adam, S., Hwang, E. H., Galitski, V. M. & Das Sarma, S. A self-consistent theory for graphene transport. Proc. Natl Acad. Sci. USA 104, 18392-18397 (2007).
19. Martin, J. et al. Observation of electron-hole puddles in graphene using a scanning single-electron transistor. Nature Phys. 4, 144-148 (2008).
20. Lemme, M. C., Echtermeyer, T. J., Baus, M. & Kurz, H. A. K. H. A graphene field-effect device. IEEE Electron. Device Lett. 28, 282-284 (2007).
21. Huard, B. et al. Transport measurements across a tuneable potential barrier in graphene. Phys. Rev. Lett. 98, 236803 (2007).
22. Williams, J. R., Dicarlo, L. & Marcus, C. M. Quantum Hall effect in a gate-controlled p-n junction of graphene. Science 317, 638-641 (2007).
23. Ozyilmaz, B. et al. Electronic transport and quantum Hall effect in bipolar graphene p-n-p junctions. Phys. Rev. Lett. 99, 166804 (2007).
24. Das, A. et al. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nature Nanotech. 3, 210-215 (2008).
25. Chen, Y.-F. & Fuhrer, M. S. Electric-field-dependent charge-carrier velocity in semiconducting carbon nanotubes. Phys. Rev. Lett. 95, 236803 (2005).
26. Richman, P. MOSFETs and integrated circuits (Wiley, New York, 1973).
27. Yao, Z., Kane, C. L. & Dekker, C. High-field electrical transport in single-wall carbon nanotubes. Phys. Rev. Lett. 84, 2941-2944 (2000).
28. Park, J. Y. et al. Electron-phonon scattering in metallic single-walled carbon nanotubes. Nano Lett. 4, 517-520 (2004).
29. Brews, J. A charge-sheet model of the MOSFET. Solid State Electron. 21, 345-355 (1978).
30. Canali, C., Majni, G., Minder, R. & Ottaviani, G. Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature. IEEE Trans. Electron. Dev. 22, 1045-1047 (1975).
31. Fischetti, M. V., Neumayer, D. A. & Cartier, E. A. Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-kappa insulator: The role of remote phonon scattering. J. Appl. Phys. 90, 4587-4608 (2001).
32. Ferrari, A. C. et al. Raman spectrumof graphene and graphene layers. Phys. Rev. Lett. 97, 187401 (2006).