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Volumn 303, Issue 5664, 2004, Pages 1644-1646

Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARRIER MOBILITY; ELASTOMERS; FIELD EFFECT TRANSISTORS;

EID: 1542723292     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1094196     Document Type: Article
Times cited : (1604)

References (29)
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    • 1542773767 scopus 로고    scopus 로고
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    • Materials and methods are available as supporting material on Science Online.
  • 24
    • 1542773763 scopus 로고    scopus 로고
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    • i is the capacitance of the gate dielectric, and d is the derivative operator.
  • 25
    • 1542563392 scopus 로고    scopus 로고
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    • SD).
  • 29
    • 1542458979 scopus 로고    scopus 로고
    • note
    • V.P. and M.E.G. were supported by NSF grant DMR-0077825. Atomic force microscopy measurements were done in the Center for Microanalysis of Materials at the University of Illinois, Urbana-Champaign (partially funded by U.S. Department of Energy grant DEFG02-91-ER45439). We thank A. Erbe, Y.-L. Loo, K. W. Baldwin, C. Kloc. A. Borissov, V. Kiryukhin, M. Watson, and A. Shim (Dow Corning) for technical support and helpful discussions.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.