-
1
-
-
77957204738
-
-
10.1103/PhysRevLett.105.136805
-
K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, 136805 (2010). 10.1103/PhysRevLett.105.136805
-
(2010)
Phys. Rev. Lett.
, vol.105
, pp. 136805
-
-
Mak, K.F.1
Lee, C.2
Hone, J.3
Shan, J.4
Heinz, T.F.5
-
4
-
-
79952406873
-
-
10.1038/nnano.2010.279
-
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011). 10.1038/nnano.2010.279
-
(2011)
Nat. Nanotechnol.
, vol.6
, pp. 147
-
-
Radisavljevic, B.1
Radenovic, A.2
Brivio, J.3
Giacometti, V.4
Kis, A.5
-
5
-
-
84889869392
-
-
See for the international technology roadmafor semiconductors. Process integration, devices, and structures, 2011 ed., Cha
-
See http://www.itrs.net for the international technology roadmap for semiconductors. Process integration, devices, and structures, 2011 ed., Chap.
-
-
-
-
6
-
-
80052090759
-
-
10.1109/TED.2011.2159221
-
L. Liu, S. B. Kumar, Y. Ouyang, and J. Guo, IEEE Trans. Electron Devices 58, 3042 (2011). 10.1109/TED.2011.2159221
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, pp. 3042
-
-
Liu, L.1
Kumar, S.B.2
Ouyang, Y.3
Guo, J.4
-
8
-
-
84866027034
-
-
10.1021/nl302015v
-
H. Wang, L. Yu, Y.-H. Lee, Y. Shi, A. Hsu, M. L. Chin, L.-J. Li, M. Dubey, J. Kong, and T. Palacios, Nano Lett. 12, 4674 (2012). 10.1021/nl302015v
-
(2012)
Nano Lett.
, vol.12
, pp. 4674
-
-
Wang, H.1
Yu, L.2
Lee, Y.-H.3
Shi, Y.4
Hsu, A.5
Chin, M.L.6
Li, L.-J.7
Dubey, M.8
Kong, J.9
Palacios, T.10
-
9
-
-
84858233159
-
-
10.1021/nl2038634
-
B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, Nano Lett. 12, 1324 (2012). 10.1021/nl2038634
-
(2012)
Nano Lett.
, vol.12
, pp. 1324
-
-
Szafranek, B.N.1
Fiori, G.2
Schall, D.3
Neumaier, D.4
Kurz, H.5
-
10
-
-
34547829289
-
-
10.1063/1.2768624
-
P. Blake, E. W. Hill, A. H. C. Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, Appl. Phys. Lett. 91, 063124 (2007). 10.1063/1.2768624
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 063124
-
-
Blake, P.1
Hill, E.W.2
Neto, A.H.C.3
Novoselov, K.S.4
Jiang, D.5
Yang, R.6
Booth, T.J.7
Geim, A.K.8
-
12
-
-
2242425098
-
-
10.1103/PhysRev.136.A833
-
R. Fivaz and E. Mooser, Phys. Rev. 136, A833 (1964). 10.1103/PhysRev.136. A833
-
(1964)
Phys. Rev.
, vol.136
, pp. 833
-
-
Fivaz, R.1
Mooser, E.2
-
14
-
-
41849125958
-
-
10.1038/nnano.2008.58
-
J. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Nat. Nanotechnol. 3, 206 (2008). 10.1038/nnano.2008.58
-
(2008)
Nat. Nanotechnol.
, vol.3
, pp. 206
-
-
Chen, J.1
Jang, C.2
Xiao, S.3
Ishigami, M.4
Fuhrer, M.S.5
-
16
-
-
0003342913
-
-
10.1016/S1369-8001(00)00015-9
-
R. Quay, C. Moglestue, V. Palankovski, and S. Selberherr, Mater. Sci. Semicond. Process. 3, 149 (2000). 10.1016/S1369-8001(00)00015-9
-
(2000)
Mater. Sci. Semicond. Process.
, vol.3
, pp. 149
-
-
Quay, R.1
Moglestue, C.2
Palankovski, V.3
Selberherr, S.4
-
17
-
-
57349090160
-
-
10.1038/nnano.2008.268
-
I. Meric, M. Y. Han, A. F. Young, B. Ozylmaz, P. Kim, and K. L. Shepard, Nat. Nanotechnol. 3, 654 (2008). 10.1038/nnano.2008.268
-
(2008)
Nat. Nanotechnol.
, vol.3
, pp. 654
-
-
Meric, I.1
Han, M.Y.2
Young, A.F.3
Ozylmaz, B.4
Kim, P.5
Shepard, K.L.6
|