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Volumn 103, Issue 23, 2013, Pages

Velocity saturation in few-layer MoS2 transistor

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL FORMULAS; CRITICAL ELECTRIC FIELD; EXPERIMENTAL INVESTIGATIONS; II-IV SEMICONDUCTORS; OPTICAL PHONONS; SATURATION VELOCITY; SUSPENDED GRAPHENE; VELOCITY SATURATION;

EID: 84889817372     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4840175     Document Type: Article
Times cited : (68)

References (18)
  • 5
    • 84889869392 scopus 로고    scopus 로고
    • See for the international technology roadmafor semiconductors. Process integration, devices, and structures, 2011 ed., Cha
    • See http://www.itrs.net for the international technology roadmap for semiconductors. Process integration, devices, and structures, 2011 ed., Chap.
  • 12
    • 2242425098 scopus 로고
    • 10.1103/PhysRev.136.A833
    • R. Fivaz and E. Mooser, Phys. Rev. 136, A833 (1964). 10.1103/PhysRev.136. A833
    • (1964) Phys. Rev. , vol.136 , pp. 833
    • Fivaz, R.1    Mooser, E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.