Effect of Si cap layer on parasitic channel operation in Si/SiGe metal-oxide-semiconductor structures

Journal of Applied Physics

Volumn 93, Issue 6, 2003, Pages 3545-3552

  Sareen, Alok ^a   Wang, Yun ^a,b   Södervall, Ulf ^a   Lundgren, Per ^a   Bengtsson, Stefan ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ETCHING; INTERFACES (MATERIALS); MOSFET DEVICES; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

CHANNEL CARRIER CONFINEMENT;

MOS DEVICES;

EID: 0037444970     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1542916     Document Type: Article

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