Ge Self-Diffusion in Epitaxial Si1-xGex Layers

Physical Review Letters

Volumn 87, Issue 12, 2001, Pages

  Zangenberg, N R ^a   Lundsgaard Hansen, J ^a   Fage Pedersen, J ^a   Nylandsted Larsen, A ^a  

^a AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; GERMANIUM; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; STRAIN; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

COMPRESSIVE STRAIN; GERMANIUN SELF DIFFUSION; SILICON GERMANIUM; STEPWISE EQUILIBRATION TECHNIQUE; TENSILE STRAIN;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 39249083706     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.87.125901     Document Type: Article

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