SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 214-217

Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing

(7) Zhao, H B a Pey, K L a,b Choi, W K a,b Chattopadhyay, S a Fitzgerald, E A a,c Antoniadis, D A a,d Lee, P S b

a SINGAPORE MIT ALLIANCE (Singapore)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

c Massachusetts Institute of Technology Cambridge (United States)

d USA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; LOW TEMPERATURES; MIXED LAYER; SHEET RESISTANCE MEASUREMENTS; TRANSMISSION ELECTRON MICROSCOPE; UNIFORM FILMS;

GERMANIUM; RAPID THERMAL ANNEALING; SILICIDES; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 0036639058 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1482423 Document Type: Article

Times cited : (66)

References (26)

1
- 0026765271
- ell ELLEAK 0013-5194
- U. Konig, A. J. Boers, F. Schaffler, E. Kasper, Electron. Lett. 28, 160 (1992). ell ELLEAK 0013-5194
- (1992) Electron. Lett. , vol.28 , pp. 160
- Konig, U.¹ Boers, A.J.² Schaffler, F.³ Kasper, E.⁴

2
- 0011411061
- apl APPLAB 0003-6951
- D. K. Nayak, J. C. S. Woo, J. S. Park, K. L. Wang, K. P. MacWilliams, Appl. Phys. Lett. 62, 2853 (1993). apl APPLAB 0003-6951
- (1993) Appl. Phys. Lett. , vol.62 , pp. 2853
- Nayak, D.K.¹ Woo, J.C.S.² Park, J.S.³ Wang, K.L.⁴ MacWilliams, K.P.⁵

3
- 34547288498
- etd IETDAI 0018-9383
- J. Welser, J. L. Hoyt, J. F. Gibbons, IEEE Trans. Electron Devices 40, 2101 (1993). etd IETDAI 0018-9383
- (1993) IEEE Trans. Electron Devices , vol.40 , pp. 2101
- Welser, J.¹ Hoyt, J.L.² Gibbons, J.F.³

4
- 0001629258
- jvb JVTBD9 0734-211X
- S. P. Muraka, J. Vac. Sci. Technol. B 4, 1325 (1986). jvb JVTBD9 0734-211X
- (1986) J. Vac. Sci. Technol. B , vol.4 , pp. 1325
- Muraka, S.P.¹

5
- 0001153888
- jaJAPIAU 0021-8979
- J. B. Lai and L. J. Chen, J. Appl. Phys. 86, 1340 (1999). jap JAPIAU 0021-8979
- (1999) J. Appl. Phys. , vol.86 , pp. 1340
- Lai, J.B.¹ Chen, L.J.²

6
- 0000555333
- apl APPLAB 0003-6951
- R. A. Donaton, K. Maex, A. Vantomme, G. Langouche, Y. Morciaux, A. St. Amour, J. C. Sturm, Appl. Phys. Lett. 70, 1266 (1997). apl APPLAB 0003-6951
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1266
- Donaton, R.A.¹ Maex, K.² Vantomme, A.³ Langouche, G.⁴ Morciaux, Y.⁵ St. Amour, A.⁶ Sturm, J.C.⁷

7
- 0000988828
- apl APPLAB 0003-6951
- H. K. Liou, X. Wu, U. Gennser, V. P. Kesan, S. S. Iyer, K. N. Tu, E. S. Yang, Appl. Phys. Lett. 60, 577 (1992). apl APPLAB 0003-6951
- (1992) Appl. Phys. Lett. , vol.60 , pp. 577
- Liou, H.K.¹ Wu, X.² Gennser, U.³ Kesan, V.P.⁴ Iyer, S.S.⁵ Tu, K.N.⁶ Yang, E.S.⁷

8
- 0001535248
- apl APPLAB 0003-6951
- D.-R. Chen, J.-S. Luo, W.-T. Lin, C. Y. Chang, P. S. Shih, Appl. Phys. Lett. 73, 1355 (1998). apl APPLAB 0003-6951
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1355
- Chen, D.-R.¹ Luo, J.-S.² Lin, W.-T.³ Chang, C.Y.⁴ Shih, P.S.⁵

9
- 0024135222
- jes JESOAN 0013-4651
- R. D. Thompson, K. N. Tu, J. Angillelo, S. Delage, S. S. Iyer, J. Electrochem. Soc. 135, 3161 (1988). jes JESOAN 0013-4651
- (1988) J. Electrochem. Soc. , vol.135 , pp. 3161
- Thompson, R.D.¹ Tu, K.N.² Angillelo, J.³ Delage, S.⁴ Iyer, S.S.⁵

10
- 0000970878
- jaJAPIAU 0021-8979
- J.-Shing Luo, W.-Tai Lin, C. Y. Yang, W. C. Tsai, J. Appl. Phys. 82, 3621 (1997). jap JAPIAU 0021-8979
- (1997) J. Appl. Phys. , vol.82 , pp. 3621
- Luo, J.-S.¹ Lin, W.-T.² Yang, C.Y.³ Tsai, W.C.⁴

11
- 0029310051
- etd IETDAI 0018-9383
- T. Morimoto, T. Ohguro, H. S. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchikaki, M. Ono, Y. Katsumata, H. Iwai, IEEE Trans. Electron Devices 42, 915 (1995). etd IETDAI 0018-9383
- (1995) IEEE Trans. Electron Devices , vol.42 , pp. 915
- Morimoto, T.¹ Ohguro, T.² Momose, H.S.³ Iinuma, T.⁴ Kunishima, I.⁵ Suguro, K.⁶ Katakabe, I.⁷ Nakajima, H.⁸ Tsuchikaki, M.⁹ Ono, M.¹⁰ Katsumata, Y.¹¹ Iwai, H.¹²

12
- 0346316480
- jvb JVTBD9 0734-211X
- R. T. Tung, A. F. J. Levi, J. M. Gibson, J. Vac. Sci. Technol. B 4, 1435 (1986). jvb JVTBD9 0734-211X
- (1986) J. Vac. Sci. Technol. B , vol.4 , pp. 1435
- Tung, R.T.¹ Levi, A.F.J.² Gibson, J.M.³

13
- 84951343900
- jva JVTAD6 0734-2101
- F. M. d'Heurle, J. Vac. Sci. Technol. A 7, 1467 (1989). jva JVTAD6 0734-2101
- (1989) J. Vac. Sci. Technol. A , vol.7 , pp. 1467
- D'Heurle, F.M.¹

14
- 0031073160
- tsf THSFAP 0040-6090
- E. A. Fitzgerald and S. B. Samavedam, Thin Solid Films 294, 3 (1997). tsf THSFAP 0040-6090
- (1997) Thin Solid Films , vol.294 , pp. 3
- Fitzgerald, E.A.¹ Samavedam, S.B.²

15
- 0000059047
- apl APPLAB 0003-6951
- M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leitz, E. A. Fitzgerald, Appl. Phys. Lett. 72, 1718 (1998). apl APPLAB 0003-6951
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1718
- Currie, M.T.¹ Samavedam, S.B.² Langdo, T.A.³ Leitz, C.W.⁴ Fitzgerald, E.A.⁵

16
- 0035501426
- sel SSELA5 0038-1101
- C. S. Tan, W. K. Choi, L. K. Bera, K. L. Pey, D. A. Antoniadis, E. A. Fitzgerald, M. T. Currie, C. K. Maiti, Solid-State Electron. 45, 1945 (2001). sel SSELA5 0038-1101
- (2001) Solid-State Electron. , vol.45 , pp. 1945
- Tan, C.S.¹ Choi, W.K.² Bera, L.K.³ Pey, K.L.⁴ Antoniadis, D.A.⁵ Fitzgerald, E.A.⁶ Currie, M.T.⁷ Maiti, C.K.⁸

17
- 84861425328
- 1998 JCPDS- International Centre for Diffraction Data, PCPDFWIN, v. 2.01
- Standard JCPDS diffraction pattern - 77-2111 and 04-0545, 1998 JCPDS- International Centre for Diffraction Data, PCPDFWIN, v. 2.01.
- Standard JCPDS Diffraction Pattern - 77-2111 and 04-0545

18
- 0003542751
- INSPEC, the Institution of Electrical Engineers, London, United Kingdom
- Properties of Strained and Relaxed Silicon Germanium, edited by E. Kasper (INSPEC, the Institution of Electrical Engineers, London, United Kingdom, 1995).
- (1995) Properties of Strained and Relaxed Silicon Germanium
- Kasper, E.¹

19
- 84861446852
- 1998 JCPDS- International Centre for Diffraction Data, PCPDFWIN, v. 2.01
- Standard JCPDS diffraction pattern - 38-0844, 1998 JCPDS- International Centre for Diffraction Data, PCPDFWIN, v. 2.01.
- Standard JCPDS Diffraction Pattern - 38-0844

20
- 0020720991
- jem JECMA5 0361-5235
- E. G. Colgan, M. Mäenpää, M. Finetti, M.-A. Nicolet, J. Electron. Mater. 12, 413 (1983). jem JECMA5 0361-5235
- (1983) J. Electron. Mater. , vol.12 , pp. 413
- Colgan, E.G.¹ Mäenpää, M.² Finetti, M.³ Nicolet, M.-A.⁴

21
- 0000822604
- tsf THSFAP 0040-6090
- J. O. Olowolafe, M.-A. Nicolet, J. W. Mayer, Thin Solid Films 38, 143 (1976). tsf THSFAP 0040-6090
- (1976) Thin Solid Films , vol.38 , pp. 143
- Olowolafe, J.O.¹ Nicolet, M.-A.² Mayer, J.W.³

22
- 0021444627
- jaJAPIAU 0021-8979
- F. d'Heurle, C. S. Petersson, J. E. E. Baglin, S. J. La Placa, C. Y. Wong, J. Appl. Phys. 55, 4208 (1984). jap JAPIAU 0021-8979
- (1984) J. Appl. Phys. , vol.55 , pp. 4208
- D'Heurle, F.¹ Petersson, C.S.² Baglin, J.E.E.³ La Placa, S.J.⁴ Wong, C.Y.⁵

23
- 84861450008
- Materials Research Society, Pittsburgh
- J. C. Barbour, P. E. Batson, J. W. Mayer, Thin Films - Interfaces and Phenomena, Part of the Fall 1985 Meeting of the Materials Research Society (Materials Research Society, Pittsburgh, 1986), p. 26.
- (1986) Thin Films - Interfaces and Phenomena, Part of the Fall 1985 Meeting of the Materials Research Society , pp. 26
- Barbour, J.C.¹ Batson, P.E.² Mayer, J.W.³

24
- 0142048135
- inm INOMAF 0020-1685
- N. F. Podgrushko, N. F. Selivanova, L. A. Dvorina, Inorg. Mater. (Transl. of Neorg. Mater.) 10, 150 (1974). inm INOMAF 0020-1685
- (1974) Inorg. Mater. (Transl. of Neorg. Mater.) , vol.10 , pp. 150
- Podgrushko, N.F.¹ Selivanova, N.F.² Dvorina, L.A.³

25
- 36549098409
- jaJAPIAU 0021-8979
- P. Gas, F. M. d'Heurle, F. K. LeGoues, S. J. La Placa, J. Appl. Phys. 59, 3458 (1986). jap JAPIAU 0021-8979
- (1986) J. Appl. Phys. , vol.59 , pp. 3458
- Gas, P.¹ D'Heurle, F.M.² Legoues, F.K.³ La Placa, S.J.⁴

26
- 0035953813
- jal JALCEU 0925-8388
- B. Bokhonov and M. Korchagin, J. Alloys Compd. 319, 187 (2001). jal JALCEU 0925-8388
- (2001) J. Alloys Compd. , vol.319 , pp. 187
- Bokhonov, B.¹ Korchagin, M.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.