Relaxed silicon-germanium on insulator substrate by layer transfer

Journal of Electronic Materials

Volumn 30, Issue 12, 2001, Pages

  Cheng, Zhiyuan ^a   Taraschi, Gianni ^a   Currie, Matthew T ^a   Leitz, Chris W ^a   Lee, Minjoo L ^a   Pitera, Arthur ^a   Langdo, Thomas A ^a   Hoyt, Judy L ^a   Antoniadis, Dimitri A ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Bonding; Graded buffer; Relaxed Si1 xGex on insulator; Smart cut; UHVCVD

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DELAMINATION; EPITAXIAL GROWTH; HETEROJUNCTIONS; ION IMPLANTATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; WSI CIRCUITS;

ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHVCVD);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035737117     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0182-0     Document Type: Article

References (10)