Effect of thermal processing on mobility in strained Si/strained Si 1-yGe y on relaxed Si 1-xGe x(x (7) Jung, Jongwan a Yu, Shaofeng a,c Olubuyide, Oluwamuyiwa Oluwagbemiga a Hoyt, Judy L a Antoniadis, Dimitri A a Lee, Minjoo L b Fitzgerald, Eugene A b a Department of Electrical Engineering and Computer Science (United States) b USA (United States) c TEXAS INSTRUMENTS (United States)

Applied Physics Letters

Volumn 84, Issue 17, 2004, Pages 3319-3321

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; DUAL-CHANNEL STRUCTURES; MOBILITY ENHANCEMENT; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHVCVD);

ACTIVATION ENERGY; ANNEALING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION; ELECTRON MOBILITY; EPITAXIAL GROWTH; HOLE MOBILITY; MOS DEVICES; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 2542434158     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1719275     Document Type: Article

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