Strained Si on insulator technology: From materials to devices

Solid-State Electronics

Volumn 48, Issue 8, 2004, Pages 1357-1367

  Langdo, T A ^a   Currie, M T ^a   Cheng, Z Y ^a   Fiorenza, J G ^a   Erdtmann, M ^a   Braithwaite, G ^a   Leitz, C W ^a   Vineis, C J ^a   Carlin, J A ^a   Lochtefeld, A ^a   Bulsara, M T ^a   Lauer, I ^b   Antoniadis, D A ^b   Somerville, M ^c  

^a AmberWave Systems Corporation   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c FRANKLIN W OLIN COLLEGE OF ENGINEERING   (United States)

Author keywords

Critical thickness; Leakage currents; MOSFETs; Silicon germanium alloys; Silicon on insulator; Strained silicon; Wafer bonding

Indexed keywords

ANNEALING; DOPING (ADDITIVES); LEAKAGE CURRENTS; MICROELECTRONICS; MOSFET DEVICES; OXIDATION; PHOTOEMISSION; SILICON WAFERS; STRAIN; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY; THIN FILMS;

CRITICAL THICKNESS; SILICON GERMANIUM ALLOYS; STRAINED SILICON; WAFER BONDING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 2342544149     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.02.013     Document Type: Article

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