Scalability of Strained Silicon CMOSFET and High Drive Current Enhancement in the 40nm Gate Length Technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 65-68

  Sanuki, T ^a   Oishi, A ^a   Morimasa, Y ^a   Aota, S ^a   Kinoshita, T ^a   Hasumi, R ^a   Takegawa, Y ^a   Isobe, K ^a   Yoshimura, H ^a   Iwai, M ^a   Sunouchi, K ^a   Noguchi, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; ELECTRIC CURRENTS; ELECTRON MOBILITY; HOLE MOBILITY; SILICON COMPOUNDS; STRAIN; TENSILE STRESS;

DRIVE CURRENT ENHANCEMENT; SHALLOW TRENCH ISOLATION (STI);

MOSFET DEVICES;

EID: 0842331413     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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