20 nm N + abrupt junction formation in Strained Si/Si 1-xGe x MOS device

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 481-484

  Lee, K L ^a   Cardone, F ^a   Saunders, P ^a   Kozlowski, P ^a   Ronsheim, P ^b   Zhu, H ^b   Li, J ^b   Chu, J ^a   Chan, K ^a   Ieong, M ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT MOTION; NITRIDATION;

ANNEALING; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DIFFUSION; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; STRAIN; SUBSTRATES; THICKNESS CONTROL; TRANSMISSION ELECTRON MICROSCOPY;

MOS DEVICES;

EID: 17644434931     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Ken Rim, et al, Symp. of VLSI Tech, p.98-99, 2002.
2. Ken Rim et al, Symp. of VLSI Tech., p.59-60, 2001
3. A. D. N. Paine, et al, J. of Material Sci., Vol.10, P.339, 1999.