Ultrathin body SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1328-1333

  Tezuka, Tsutomu ^a   Sugiyama, Naoharu ^a   Mizuno, Tomohisa ^a   Takagi, Shin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Mobility enhancement; SiGe MOSFET; Silicon on insulator (SOI) technology; Strained SiGe channel; Surface channel MOSFET; Ultrathin body SOI

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY;

BURIED OXIDE LAYERS; GATE OXIDE; SILICON GERMANIUM;

MOSFET DEVICES;

EID: 0043175190     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813249     Document Type: Article

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