Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 734-738

  Hackbarth, T ^a   Hoeck, G ^a   Herzog, H J ^a   Zeuner, M ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ELECTRON CONFINEMENT; MODULATION DOPED FIELD EFFECT TRANSISTOR (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0032667315     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01460-2     Document Type: Article

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