Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

Applied Physics Letters

Volumn 83, Issue 5, 2003, Pages 875-877

  Drake, T S ^a   Ni Chleirigh C ^a   Lee, M L ^a   Pitera, A J ^a   Fitzgerald, E A ^a   Antoniadis, D A ^a   Anjum, D H ^b   Li, J ^b   Hull, R ^b   Klymko, N ^c   Hoyt, J L ^a  

^a Massachusetts Institute of Technology   (United States)

^b University of Virginia   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; MOS DEVICES; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; STRAIN; THERMODYNAMIC STABILITY;

INSULATOR LAYERS;

SILICON;

EID: 0042378545     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1598649     Document Type: Article

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