Strained silicon MOSFET technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 23-26

  Hoyt, J L ^a   Nayfeh, H M ^a   Eguchi, S ^a   Aberg, I ^a   Xia, G ^a   Drake, T ^a   Fitzgerald, E A ^a   Antoniadis, D A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIFFUSION; ELECTRON MOBILITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STRAIN; TENSILE STRESS;

DOPANT DIFFUSION;

MOSFET DEVICES;

EID: 0036927652     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2002.1175770     Document Type: Article

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