High speed p-type SiGe modulation-doped field-effect transistors

IEEE Electron Device Letters

Volumn 17, Issue 3, 1996, Pages 124-126

  Arafa, M ^a   Fay, P ^a   Ismail, K ^b   Chu, J O ^c   Meyerson, B S ^c   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b CAIRO UNIVERSITY   (Egypt)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETCHING; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE; VACUUM APPLICATIONS;

CUT OFF FREQUENCIES; HIGH HOLE MOBILITY; MODULATION DOPED FIELD EFFECT TRANSISTORS; PINCH OFF CHARACTERISTICS; UNITY CURRENT GAIN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030109420     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485188     Document Type: Article

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