High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 934-936

  Mizuno, T ^a   Takagi, S ^a   Sugiyama, N ^a   Koga, J ^a   Tezuka, T ^a   Usuda, K ^a   Hatakeyama, T ^a   Kurobe, A ^a   Toriumi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; OXYGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; STRAIN; SUBSTRATES;

HIGH TEMPERATURE ANNEALING; SIMOX TECHNOLOGY; STRAINED SILICON STRUCTURE;

MOSFET DEVICES;

EID: 0033351010     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)