High-performance strained Si-on-insulator MOSFETs by novel fabrication processes utilizing Ge-condensation technique

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 96-97

  Tezuka, Tsutomu ^a   Sugiyama, Naoharu ^a   Mizuno, Tomohisa ^a   Takagi, Shin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; CONDENSATION; FABRICATION; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SILICON ON INSULATOR TECHNOLOGY; STRAIN;

STRAIN RELAXATION;

MOSFET DEVICES;

EID: 0036045607     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)