Comparison of arsenic and phosphorus diffusion behavior in silicon-germanium alloys

Applied Physics Letters

Volumn 80, Issue 10, 2002, Pages 1743-1745

  Eguchi, S ^a   Hoyt, J L ^a   Leitz, C W ^b   Fitzgerald, E A ^b  

^a USA   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BEHAVIOR; EFFECTIVE DIFFUSIVITIES; PHOSPHORUS DIFFUSION; SILICON-GERMANIUM ALLOYS; SOURCE/DRAIN JUNCTIONS; TRANSIENT DIFFUSION;

ARSENIC; CERIUM ALLOYS; DIFFUSION; GERMANIUM; PHOSPHORUS; SILICON; SILICON ALLOYS;

GERMANIUM ALLOYS;

EID: 79956038488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1458047     Document Type: Article

References (6)

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