Effects of Si-cap layer thinning and Ge segregation on the characteristics of Si/SiGe/Si heterostructure pMOSFETs

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1983-1989

  Song, Young Joo ^a   Lim, Jung Wook ^a   Kim, Sang Hoon ^a   Bae, Hyun Chul ^a   Kang, Jin Young ^a   Park, Kyung Wan ^a   Shim, Kyu Hwan ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Ge segregation; Interface state density; MOSFET; Si cap layer; Si SiGe Si heterostructure; Transconductance

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); HETEROJUNCTIONS; INTERFACES (MATERIALS); THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

INTERFACE STATE DENSITIES;

MOSFET DEVICES;

EID: 0036839255     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00139-9     Document Type: Conference Paper

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