Channel Structure Design, Fabrication and Carrier Transport Properties of Strained-Si/SiGe-On-Insulator (Strained-SOI) MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 57-60

  Takagi, S ^a   Mizuno, T ^a   Tezuka, T ^a   Sugiyama, N ^a   Numata, T ^a   Usuda, K ^a   Moriyama, Y ^a   Nakaharai, S ^a   Koga, J ^a   Tanabe, A ^a   Hirashita, N ^a   Maeda, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; HOLE MOBILITY; SILICON COMPOUNDS; STRAIN; TRANSPORT PROPERTIES;

CARRIER TRANSPORT PROPERTIES; SILICON ON INSULATOR (SOI);

MOSFET DEVICES;

EID: 0842331405     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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