Measurement of the effect of self-heating in strained-silicon MOSFETs

IEEE Electron Device Letters

Volumn 23, Issue 6, 2002, Pages 360-362

  Jenkins, K A ^a,b   Rim, K ^a,b  

^a IEEE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Channel temperature; Current voltage (I V) curves; FET; Measurement; MOSFET; Output characteristics; Self heating; SiGe; Silicon on insulator (SOI); Strained silicon; Submicron

Indexed keywords

CHANNEL TEMPERATURE; DRAIN CURRENT; OUTPUT CHARACTERISTICS; VOLTAGE DROP;

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); HEAT RESISTANCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; THERMAL CONDUCTIVITY OF SOLIDS;

MOSFET DEVICES;

EID: 0036610426     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1004235     Document Type: Letter

References (9)

1. Transconductance enhancement in deep submicron strained-Si n-MOSFETs
2. High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology
3. Strain dependence of the performance enhancement in strained-Si n-MOSFETs
4. Comparative study of phononlimited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors
5. Strained Si NMOSFETs for high performance CMOS technology
6. Thermal and electric properties of heavily doped Ge-Si alloys up to 1300 K
7. Measurement of I-V curves of silicon-on-insulator (SOI) MOSFETs without self-heating
8. Measurement and modeling of self-heating in SOI nMOSFETs
9. Effect of microscale thermal conduction on the packing limit of silicon-on-insulator electronic devices