Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

IEEE Electron Device Letters

Volumn 22, Issue 7, 2001, Pages 321-323

  Cheng, Zhi Yuan ^b   Currie, Matthew T ^b   Leitz, Chris W ^b   Taraschi, Gianni ^b   Fitzgerald, Eugene A ^b   Hoyt, Judy L ^c   Antoniadas, Dimitri A ^a,c  

^a IEEE

^b Massachusetts Institute of Technology Cambridge   (United States)

^c USA   (United States)

Author keywords

Bonding; BOX; Etch back; Etch stop; Mobility; MOSFET; S GOI; SiGe; SiGe on insulator; SOI; Strained Si

Indexed keywords

BONDING; ELECTRON MOBILITY; ETCHING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES;

ELECTRON MOBILITY ENHANCEMENT; ETCH-BACK; ETCH-STOP; SILICON GERMANIUM ON INSULATOR; STRAINED SILICON;

MOSFET DEVICES;

EID: 0035395813     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.930678     Document Type: Article

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